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For the Inventor, By the Inventor

Hsinchu, Taiwan

Chi-Pin Lu

USPTO Granted Patents = 16 

Average Co-Inventor Count = 2.1

ph-index = 2

Forward Citations = 13(Granted Patents)


Location History:

  • Hsinchu, TW (2009 - 2019)
  • Hsinchu County, TW (2013 - 2020)
  • Zhubei, TW (2024)

Company Filing History:

goldMedal16 out of 3,602 
 
Macronix International Co., Ltd.
 patents

Years Active: 2009-2025

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16 patents (USPTO):Explore Patents
1. 12408342 - Memory device with multi-layered charge storage stack (2025-09-02),
2. 11895841 - Memory structure and manufacturing method for the same (2024-02-06),
3. 10714494 - 3D memory device with silicon nitride and buffer oxide layers and method of manufacturing the same (2020-07-14),
4. 10181475 - Three-dimensional non-volatile memory and manufacturing method thereof (2019-01-15),
5. 10056395 - Method of improving localized wafer shape changes (2018-08-21),
6. 8581322 - Nonvolatile memory device and method for making the same (2013-11-12),
7. 8373218 - Nitride read-only memory cell and method of manufacturing the same (2013-02-12),
8. 8183618 - Method for fabricating a charge trapping memory device (2012-05-22),
9. 7927660 - Method of manufacturing nano-crystalline silicon dot layer (2011-04-19),
10. 7875926 - Non-volatile memory cell (2011-01-25),
11. 7863132 - Method for fabricating a charge trapping memory device (2011-01-04),
12. 7834382 - Nitride read-only memory cell and method of manufacturing the same (2010-11-16),
13. 7749838 - Fabricating method of non-volatile memory cell (2010-07-06),
14. 7544616 - Methods of forming nitride read only memory and word lines thereof (2009-06-09),
15. 7531411 - Apparatus and method for a non-volatile memory structure comprising a multi-layer silicon-rich, silicon nitride trapping layer (2009-05-12),

Title: **Chi-Pin Lu: A Leading Innovator in Memory Technology**

Introduction

Chi-Pin Lu, a distinguished inventor based in Hsinchu, Taiwan, has made significant contributions to the field of memory technology. With an impressive portfolio of 15 patents, Lu continues to push the boundaries of innovation, particularly in the development of advanced memory structures.

Latest Patents

One of Chi-Pin Lu's latest patents focuses on a memory structure and manufacturing method. This innovative memory structure consists of a charge trapping layer and two silicon oxynitride tunneling films. The first silicon oxynitride tunneling film is strategically placed between the charge trapping layer and the second tunneling film. Notably, the first film has a nitrogen atom concentration ratio ranging from 10% to 50%, while the second film maintains a lower concentration ratio between 1% to 15%. This design enhances the memory performance significantly.

Additionally, Lu has developed a 3D memory device that integrates silicon nitride and buffer oxide layers. This device includes a substrate, a stack layer comprised of alternating dielectric and conductive layers, and a charge storage structure that surrounds a channel structure. This innovative configuration optimizes the efficiency and stability of memory devices.

Career Highlights

Lu's remarkable career is highlighted by his tenure at Macronix International Co., Ltd., where he has played a pivotal role in advancing memory technologies. His work has not only garnered patents but also propelled the company to the forefront of memory solutions in the technology sector.

Collaborations

Throughout his career, Chi-Pin Lu has collaborated with esteemed colleagues, including Jung-Yu Hsieh and Pei-Ci Jhang. Their combined expertise has contributed to groundbreaking advancements in the realm of memory technologies.

Conclusion

Chi-Pin Lu's innovative spirit and commitment to excellence continue to shape the landscape of memory technology. With an impressive array of patents and collaborative efforts, he remains a vital figure in advancing the future of memory devices. His ongoing contributions are expected to pave the way for new possibilities in technology and memory solutions.

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