The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 12, 2009
Filed:
Oct. 12, 2005
Applicants:
Chi-pin LU, Hsinchu, TW;
Ling-wuu Yang, Hsunchu, TW;
Kuang-chao Chen, Taipei, TW;
Inventors:
Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/336 (2006.01); H01L 29/788 (2006.01);
U.S. Cl.
CPC ...
Abstract
A non-volatile memory structure comprises a trapping layer that includes a plurality of silicon-rich, silicon nitride layers. Each of the plurality of silicon-rich, silicon nitride layers can trap charge and thereby increase the density of memory structures formed using the methods described herein. In one aspect, the plurality of silicon-rich, silicon nitride layers are fabricated by converting an amorphous silicon layer by remote plasma nitrogen (RPN).