The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 7875926 B1

PDF
Full Text
Expired
Date of Patent:
Jan. 25, 2011

Filed:

May. 24, 2010
Applicants:

Chi-pin LU, Hsinchu, TW;

Shing-ann Luo, Hsinchu, TW;

Inventors:

Chi-Pin Lu, Hsinchu, TW;

Shing-Ann Luo, Hsinchu, TW;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/792 (2006.01); H01L 21/336 (2006.01);
U.S. Cl.
CPC ...
Abstract

A super-silicon-rich oxide (SSRO) non-volatile memory cell includes a gate conductive layer on a substrate, a source/drain in the substrate at respective sides of the gate conductive layer, a tunneling dielectric layer between the gate conductive layer and the substrate, a SSRO layer serving as a charge trapping layer between the gate conductive layer and the tunneling dielectric layer, and an upper-dielectric layer between the gate conductive layer and the SSRO layer.


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Lu, Chi-Pin. (2011). Non-volatile memory cell (U.S. Patent No. 7875926). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/7875926

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