The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 17, 2010
Filed:
Jul. 27, 2006
Yen-hao Shih, Hsinchu, TW;
Jung-yu Hsieh, Hsinchu, TW;
Yi-lin Yang, Hsinchu, TW;
Chia-hua Chang, Hsinchu, TW;
Jenn-gwo Hwu, Hsinchu, TW;
Yen-Hao Shih, Hsinchu, TW;
Jung-Yu Hsieh, Hsinchu, TW;
Yi-Lin Yang, Hsinchu, TW;
Chia-Hua Chang, Hsinchu, TW;
Jenn-Gwo Hwu, Hsinchu, TW;
MACRONIX International Co., Ltd., Hsinchu, TW;
Abstract
A manufacturing method of a charge-trapping memory device is provided. This method includes forming a stacked structure having at least a charge-trapping medium. An annealing process in a hydrogen gas is then performed on the stacked structure subsequent to the device fabrication process. The annealing process is conducted at a temperature of about 350° C. to 450° C. and with the concentration of the hydrogen gas greater than 0.5 mole percent.