The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 23, 2004
Filed:
Apr. 16, 2003
Applicant:
Inventor:
Jung-Yu Hsieh, Hsinchu, TW;
Assignee:
Macronix International Co., Ltd., Hsinchu, TW;
Primary Examiner:
Int. Cl.
CPC ...
H01L 2/976 ;
U.S. Cl.
CPC ...
H01L 2/976 ;
Abstract
A method of fabricating a semiconductor device includes providing a wafer substrate, forming a first oxide layer over the wafer substrate using a single wafer low pressure chemical vapor deposition oxidation process, forming a second oxide layer over the first oxide layer by a single wafer oxidation process, forming a nitride layer over the second oxide layer using a low temperature and pressure deposition process, and growing a top oxide layer over the nitride layer.