The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 27, 2011
Filed:
Dec. 26, 2007
Yen-hao Shih, Changhua, TW;
Min-ta Wu, Tainan, TW;
Shih-chin Lee, Siluo Township, Yunlin County, TW;
Jung-yu Hsieh, Hsinchu, TW;
Erh-kun Lai, Longjing Shiang, TW;
Kuang Yeu Hsieh, Jhubei, TW;
Yen-Hao Shih, Changhua, TW;
Min-Ta Wu, Tainan, TW;
Shih-Chin Lee, Siluo Township, Yunlin County, TW;
Jung-Yu Hsieh, Hsinchu, TW;
Erh-Kun Lai, Longjing Shiang, TW;
Kuang Yeu Hsieh, Jhubei, TW;
MACRONIX International Co., Ltd., Hsinchu, TW;
Abstract
Memory cells comprising: a semiconductor substrate having at least two source/drain regions separated by a channel region; a charge-trapping structure disposed above the channel region; and a gate disposed above the charge-trapping structure; wherein the charge-trapping structure comprises a bottom insulating layer, a first charge-trapping layer, and a second charge-trapping layer, wherein an interface between the bottom insulating layer and the substrate has a hydrogen concentration of less than about 3×10/cm, and methods for forming such memory cells.