Min-Ta Wu

Title: Min-Ta Wu: Innovator in Non-Volatile Memory Technology

Introduction

Min-Ta Wu is a prominent inventor based in Tainan, Taiwan. He has made significant contributions to the field of non-volatile memory technology. With a total of 3 patents to his name, Wu's work focuses on enhancing memory cell structures and their formation methods.

Latest Patents

Wu's latest patents include innovative methods for forming low hydrogen concentration charge-trapping layer structures for non-volatile memory. These patents describe memory cells that consist of a semiconductor substrate with at least two source/drain regions separated by a channel region. The charge-trapping structure is positioned above the channel region, with a gate located above the charge-trapping structure. The charge-trapping structure includes a bottom insulating layer, a first charge-trapping layer, and a second charge-trapping layer. Notably, the interface between the bottom insulating layer and the substrate has a hydrogen concentration of less than about 3×10/cm, which is crucial for the performance of these memory cells.

Career Highlights

Min-Ta Wu is currently employed at Macronix International Co., Ltd., where he continues to develop cutting-edge memory technologies. His expertise in semiconductor technology has positioned him as a key player in the industry.

Collaborations

Wu has collaborated with notable coworkers, including Yen-Hao Shih and Jung-Yu Hsieh, contributing to advancements in memory technology through teamwork and shared expertise.

Conclusion

Min-Ta Wu's innovative work in non-volatile memory technology and his contributions to the field through his patents highlight his role as a leading inventor. His ongoing efforts at Macronix International Co., Ltd. continue to shape the future of memory technology.