The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 31, 2012
Filed:
Mar. 29, 2011
Applicants:
Chun-ling Chiang, Hsinchu, TW;
Jung-yu Hsieh, Hsinchu, TW;
Ling-wu Yang, Hsinchu, TW;
Inventors:
Assignee:
MACRONIX International Co., Ltd., Hsinchu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/30 (2006.01); H01L 29/207 (2006.01); H01L 29/227 (2006.01); H01L 29/167 (2006.01);
U.S. Cl.
CPC ...
Abstract
An integrated circuit with improved intrinsic gettering ability is described, having a bulk micro-defect (BMD) density of 3.85×10-3.38×10/cmthrough first and second annealing steps. The first annealing step is performed at a first temperature in an atmosphere containing at least one of oxygen gas and nitrogen gas. The second annealing step is performed at a second temperature higher than the first temperature in the atmosphere.