Jun Yoshikawa

This inventor holds 47 USPTO granted patents and 5 EPO patents, primarily in Semiconductor Substrates. Top assignees: Ngk Insulators, Inc., Nagoya Institute of Technology. Active years: 2003-2026.

USPTO Granted Patents = 47

% Patents Active = 68.1

EPO Patents = 5 (Patent Applications = 5)

Average Co-Inventor Count = 3.3

ph-index = 5

Forward Citations = 68(Granted Patents)

Location History:

Aichi-Prefecture, JP (2003)
Champaign, IL (US) (2009 - 2010)
Nagoya, JP (2005 - 2024)

Company Filing History:

Nagoya Institute of Technology

patents

where one patent can have more than one assignee

Years Active: 2003-2026

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Areas of Expertise:

Semiconductor Substrate

Gallium Oxide

Zinc Oxide

SiC Composite

Epitaxial Layer

Light-Emitting Device

Lithium Battery

Sintered Body

Photovoltaic Element

Aluminum Nitride

Thin Film

Composite Substrate

47 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 12563795 - Multilayer structure (2026-02-24),

2. 12559855 - Composite substrate, method for producing composite substrate, and method for producing gallium oxide crystal film (2026-02-24),

3. 12431440 - SiC composite substrate and composite substrate for semiconductor device (2025-09-30),

4. 12424440 - Rare earth-containing SiC substrate and method for producing SiC epitaxial layer (2025-09-23),

5. 12421621 - Underlying substrate (2025-09-23),

6. 12406845 - α-GaOsemiconductor film (2025-09-02),

7. 12351941 - Ground substrate and method for producing same (2025-07-08),

8. 12351906 - Semiconductor film (2025-07-08),

9. 12183792 - SiC composite substrate and composite substrate for semiconductor device (2024-12-31),

10. 12163252 - Method for producing an α- or β-gallium oxide crystal by bring an aqueous solution including Ga ions into a supercritical state (2024-12-10),

11. 12163249 - Ground substrate and method for producing same (2024-12-10),

12. 12159907 - Semiconductor film (2024-12-03),

13. 12125883 - Biaxially oriented SiC composite substrate and semiconductor device composite substrate (2024-10-22),

14. 12080551 - SiC composite substrate including biaxially oreinted SiC layer and semiconductor device (2024-09-03),

15. 12065383 - Oriented ceramic sintered body production method and flat sheet (2024-08-20),

Title: Inventor Jun Yoshikawa - Pioneering Innovations in Nagoya

Introduction: Jun Yoshikawa is a visionary inventor based in Nagoya, Japan, known for her groundbreaking contributions to the field of technology and innovation.

Latest Patents: Jun Yoshikawa holds several patents in the areas of robotics, artificial intelligence, and sustainable energy solutions, showcasing her commitment to creating a more advanced and sustainable future.

Career Highlights: With a career spanning over two decades, Jun Yoshikawa has worked with leading tech companies and research institutions to develop cutting-edge technologies that have revolutionized various industries.

Collaborations: Throughout her career, Jun Yoshikawa has collaborated with top engineers, scientists, and researchers from around the world, fostering a culture of innovation and knowledge-sharing in her projects.

Conclusion: Jun Yoshikawa's passion for innovation and her relentless pursuit of technological advancement continue to inspire the next generation of inventors and shape the future of technology in Nagoya and beyond.