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For the Inventor, By the Inventor

Nagoya, Japan

Jun Yoshikawa

This inventor holds 47 USPTO granted patents and 5 EPO patents, primarily in Semiconductor Substrates. Top assignees: Ngk Insulators, Inc., Nagoya Institute of Technology. Active years: 2003-2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Jun Yoshikawa. Retrieved from https://idiyas.com/inventor/jun-yoshikawa

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 47

% Patents Active = 68.1

 

Average Co-Inventor Count = 3.3

ph-index = 5

Forward Citations = 68(Granted Patents)


Location History:

  • Aichi-Prefecture, JP (2003)
  • Champaign, IL (US) (2009 - 2010)
  • Nagoya, JP (2005 - 2024)

Company Filing History:

goldMedal47 out of 5,072 
 
Ngk Insulators, Inc.
 patents
silverMedal2 out of 120 
 
Nagoya Institute of Technology
 patents
where one patent can have more than one assignee

Years Active: 2003-2026

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Areas of Expertise:
Semiconductor Substrate
Gallium Oxide
Zinc Oxide
SiC Composite
Epitaxial Layer
Light-Emitting Device
Lithium Battery
Sintered Body
Photovoltaic Element
Aluminum Nitride
Thin Film
Composite Substrate
47 patents (USPTO):Explore Patents
1. 12563795 - Multilayer structure (2026-02-24),
2. 12559855 - Composite substrate, method for producing composite substrate, and method for producing gallium oxide crystal film (2026-02-24),
3. 12431440 - SiC composite substrate and composite substrate for semiconductor device (2025-09-30),
4. 12424440 - Rare earth-containing SiC substrate and method for producing SiC epitaxial layer (2025-09-23),
5. 12421621 - Underlying substrate (2025-09-23),
6. 12406845 - α-GaOsemiconductor film (2025-09-02),
7. 12351941 - Ground substrate and method for producing same (2025-07-08),
8. 12351906 - Semiconductor film (2025-07-08),
9. 12183792 - SiC composite substrate and composite substrate for semiconductor device (2024-12-31),
10. 12163252 - Method for producing an α- or β-gallium oxide crystal by bring an aqueous solution including Ga ions into a supercritical state (2024-12-10),
11. 12163249 - Ground substrate and method for producing same (2024-12-10),
12. 12159907 - Semiconductor film (2024-12-03),
13. 12125883 - Biaxially oriented SiC composite substrate and semiconductor device composite substrate (2024-10-22),
14. 12080551 - SiC composite substrate including biaxially oreinted SiC layer and semiconductor device (2024-09-03),
15. 12065383 - Oriented ceramic sintered body production method and flat sheet (2024-08-20),

Title: Inventor Jun Yoshikawa - Pioneering Innovations in Nagoya

Introduction: Jun Yoshikawa is a visionary inventor based in Nagoya, Japan, known for her groundbreaking contributions to the field of technology and innovation.

Latest Patents: Jun Yoshikawa holds several patents in the areas of robotics, artificial intelligence, and sustainable energy solutions, showcasing her commitment to creating a more advanced and sustainable future.

Career Highlights: With a career spanning over two decades, Jun Yoshikawa has worked with leading tech companies and research institutions to develop cutting-edge technologies that have revolutionized various industries.

Collaborations: Throughout her career, Jun Yoshikawa has collaborated with top engineers, scientists, and researchers from around the world, fostering a culture of innovation and knowledge-sharing in her projects.

Conclusion: Jun Yoshikawa's passion for innovation and her relentless pursuit of technological advancement continue to inspire the next generation of inventors and shape the future of technology in Nagoya and beyond.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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