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For the Inventor, By the Inventor

Nagoya, Japan

Jun Yoshikawa

USPTO Granted Patents = 45

 

Average Co-Inventor Count = 3.3

ph-index = 5

Forward Citations = 68(Granted Patents)


Location History:

  • Aichi-Prefecture, JP (2003)
  • Champaign, IL (US) (2009 - 2010)
  • Nagoya, JP (2005 - 2024)

Company Filing History:

goldMedal45 out of 4,920 
 
Ngk Insulators, Inc.
 patents
silverMedal2 out of 120 
 
Nagoya Institute of Technology
 patents
where one patent can have more than one assignee

Years Active: 2003-2025

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Areas of Expertise:
SiC Composite Substrate
Gallium Oxide
Zinc Oxide
Aluminum Nitride
Semiconductor Film
Light-Emitting Devices
Lithium Secondary Battery
Photovoltaic Elements
Sintered Body Production
Epitaxial Layer
Self-Supported Substrate
Composite Substrate
45 patents (USPTO):Explore Patents
1. 12431440 - SiC composite substrate and composite substrate for semiconductor device (2025-09-30),
2. 12424440 - Rare earth-containing SiC substrate and method for producing SiC epitaxial layer (2025-09-23),
3. 12421621 - Underlying substrate (2025-09-23),
4. 12406845 - α-GaOsemiconductor film (2025-09-02),
5. 12351941 - Ground substrate and method for producing same (2025-07-08),
6. 12351906 - Semiconductor film (2025-07-08),
7. 12183792 - SiC composite substrate and composite substrate for semiconductor device (2024-12-31),
8. 12163252 - Method for producing an α- or β-gallium oxide crystal by bring an aqueous solution including Ga ions into a supercritical state (2024-12-10),
9. 12163249 - Ground substrate and method for producing same (2024-12-10),
10. 12159907 - Semiconductor film (2024-12-03),
11. 12125883 - Biaxially oriented SiC composite substrate and semiconductor device composite substrate (2024-10-22),
12. 12080551 - SiC composite substrate including biaxially oreinted SiC layer and semiconductor device (2024-09-03),
13. 12065383 - Oriented ceramic sintered body production method and flat sheet (2024-08-20),
14. 12018401 - Gallium oxide single crystal particle and method for producing the same (2024-06-25),
15. 10717679 - Zinc oxide sintered body and method for producing same (2020-07-21),

Title: Inventor Jun Yoshikawa - Pioneering Innovations in Nagoya

Introduction: Jun Yoshikawa is a visionary inventor based in Nagoya, Japan, known for her groundbreaking contributions to the field of technology and innovation.

Latest Patents: Jun Yoshikawa holds several patents in the areas of robotics, artificial intelligence, and sustainable energy solutions, showcasing her commitment to creating a more advanced and sustainable future.

Career Highlights: With a career spanning over two decades, Jun Yoshikawa has worked with leading tech companies and research institutions to develop cutting-edge technologies that have revolutionized various industries.

Collaborations: Throughout her career, Jun Yoshikawa has collaborated with top engineers, scientists, and researchers from around the world, fostering a culture of innovation and knowledge-sharing in her projects.

Conclusion: Jun Yoshikawa's passion for innovation and her relentless pursuit of technological advancement continue to inspire the next generation of inventors and shape the future of technology in Nagoya and beyond.

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