The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 08, 2025
Filed:
Feb. 09, 2022
Applicant:
Ngk Insulators, Ltd., Nagoya, JP;
Inventors:
Assignee:
NGK INSULATORS, LTD., Nagoya, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C23C 16/40 (2006.01); C23C 16/04 (2006.01); G01J 3/44 (2006.01); H01L 21/02 (2006.01);
U.S. Cl.
CPC ...
C23C 16/40 (2013.01); C23C 16/04 (2013.01); G01J 3/44 (2013.01); H01L 21/02271 (2013.01); H01L 21/02414 (2013.01); H01L 21/0242 (2013.01); H01L 21/02433 (2013.01); H01L 21/02565 (2013.01); H01L 21/0262 (2013.01); H01L 21/02628 (2013.01);
Abstract
Provided is an α-GaObased semiconductor film having a crystal having a corundum-type crystal structure composed of α-GaOor an α-GaOsolid solution as a main phase. This semiconductor film has a size in which the diameter of the largest circle inscribed in the outer circumference thereof is 5.08 cm (2 inches) or more, and at the center point X and each of four outer circumferential points A, B, C, and D of the largest circle on the surface of the semiconductor film, the full width at half maximum of the peak in the vicinity of 216 cmin Raman spectrum of the semiconductor film, as measured by laser Raman spectroscopy, is 6.0 cmor less.