The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 22, 2024
Filed:
May. 13, 2022
Applicant:
Ngk Insulators, Ltd., Nagoya, JP;
Inventors:
Assignee:
NGK INSULATORS, LTD., Nagoya, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/00 (2006.01); H01L 21/02 (2006.01); H01L 29/04 (2006.01); H01L 29/16 (2006.01);
U.S. Cl.
CPC ...
H01L 29/1608 (2013.01); H01L 21/02378 (2013.01); H01L 21/02433 (2013.01); H01L 21/02529 (2013.01); H01L 21/02581 (2013.01); H01L 21/02609 (2013.01); H01L 21/0262 (2013.01); H01L 21/02628 (2013.01); H01L 29/04 (2013.01); H01L 21/02667 (2013.01);
Abstract
A biaxially oriented SiC composite substrate includes a first biaxially oriented SiC layer that contains a threading screw dislocation and a basal plane dislocation, and a second biaxially oriented SiC layer that is formed continuously from the first biaxially oriented SiC layer and that contains 1×10atoms/cmor more and 1×10atoms/cmor less of a rare earth element. The defect density of a surface of the second biaxially oriented SiC layer is smaller than the defect density of the first biaxially oriented SiC layer.