The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 23, 2025

Filed:

Jul. 28, 2021
Applicant:

Ngk Insulators, Ltd., Nagoya, JP;

Inventors:

Hiroshi Fukui, Obu, JP;

Morimichi Watanabe, Nagoya, JP;

Jun Yoshikawa, Nagoya, JP;

Assignee:

NGK INSULATORS, LTD., Nagoya, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C30B 29/16 (2006.01); C30B 25/18 (2006.01); C30B 29/40 (2006.01); C30B 29/66 (2006.01);
U.S. Cl.
CPC ...
C30B 25/183 (2013.01); C30B 29/16 (2013.01); C30B 29/406 (2013.01); C30B 29/66 (2013.01);
Abstract

Provided is a ground substrate includes an orientation layer used for crystal growth of a nitride or oxide of a Group 13 element. The front surface of the orientation layer on the side used for the crystal growth is composed of a material having a corundum-type crystal structure having an a-axis length and/or c-axis length larger than that of sapphire. A plurality of pores are present in the orientation layer.


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