The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 31, 2024
Filed:
Aug. 23, 2021
Applicant:
Ngk Insulators, Ltd., Nagoya, JP;
Inventors:
Kiyoshi Matsushima, Nagoya, JP;
Jun Yoshikawa, Nagoya, JP;
Morimichi Watanabe, Nagoya, JP;
Risa Miyakaze, Nagoya, JP;
Assignee:
NGK INSULATORS, LTD., Nagoya, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/16 (2006.01); C30B 29/36 (2006.01); H01L 21/02 (2006.01);
U.S. Cl.
CPC ...
H01L 29/1608 (2013.01); C30B 29/36 (2013.01); H01L 21/02378 (2013.01); H01L 21/02595 (2013.01);
Abstract
Provided is a SiC composite substrate including a biaxially-oriented SiC layer in which SiC is oriented in both a c-axis direction and an a-axis direction, and a SiC polycrystalline layer provided on one surface of the biaxially-oriented SiC layer. A joint interface of the biaxially-oriented SiC layer and the SiC polycrystalline layer has an uneven shape, which has an amount of unevenness of 1 to 200 μm.