The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 03, 2024

Filed:

Jan. 31, 2022
Applicant:

Ngk Insulators, Ltd., Nagoya, JP;

Inventors:

Hiroshi Fukui, Obu, JP;

Morimichi Watanabe, Nagoya, JP;

Jun Yoshikawa, Nagoya, JP;

Assignee:

NGK INSULATORS, LTD., Nagoya, JP;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/24 (2006.01); H01L 29/06 (2006.01);
U.S. Cl.
CPC ...
H01L 29/24 (2013.01); H01L 29/0657 (2013.01);
Abstract

Provided is a α-GaObased semiconductor film which is a semiconductor film in a circular shape having a crystal having a corundum-type crystal structure composed of α-GaOor an α-GaOsolid solution as a main phase. The maximum value θand the minimum value θfor off-angles at the center point X and four outer circumferential points A, B, C, and D of a surface of the semiconductor film satisfy the relationship of θ-θ≤0.30°. The off-angle is defined as an inclination angle θ of a crystal axis oriented in the substantially normal direction of the semiconductor film with respect to the film surface normal of the semiconductor film.


Find Patent Forward Citations

Loading…