Ngk Insulators, Inc.

Nagoya Institute of Technology

Jun Yoshikawa

Morimichi Watanabe

Tsutomu Nanataki

Katsuhiro Imai

Koichi Kondo

Kiyoshi Matsushima

Yukihisa Takeuchi

Yuji Katsuda

Takashi Yoshino

Yoshimasa Kobayashi

Kei Sato

Naomi Teratani

Hiroshi Fukui

Naohito Yamada

Nobuyuki Kobayashi

Tomohiko Sugiyama

Risa Miyakaze

Hirofumi Yamaguchi

Mikiya Ichimura

Yoshitaka Kuraoka

Shigeki Okada

Sota Okochi

Akira Urakawa

Miho Maeda

Ryuta Sugiura

Masaaki Masuda

Toru Hayase

Hiroyuki Shibata

Chikashi Ihara

Takahiro Maeda

Masaki Tanemura

Hiroya Sugimoto

Kazuki Maeda

Tomokatsu Hayakawa

Koki Kanno

Provided is a SiC composite substrate including a biaxially-oriented SiC layer in which SiC is oriented in both a c-axis direction and an a-axis direction, and a SiC polycrystalline layer provided on one surface of the biaxially-oriented SiC layer. Pores are present in the SiC composite substrate.

SiC composite substrate and composite substrate for semiconductor device

A rare earth-containing SiC substrate includes a rare earth element and Al. A concentration of the rare earth element is from 1×10atoms/cmto 1×10atoms/cminclusive and a concentration of Al is from 1×10atoms/cmto 1×10atoms/cminclusive.

Rare earth-containing SiC substrate and method for producing SiC epitaxial layer

Provided is a ground substrate includes an orientation layer used for crystal growth of a nitride or oxide of a Group 13 element. The front surface of the orientation layer on the side used for the crystal growth is composed of a material having a corundum-type crystal structure having an a-axis length and/or c-axis length larger than that of sapphire. A plurality of pores are present in the orientation layer.

Underlying substrate

An α-GaOsemiconductor film according to the present invention has a measurement point (dark spot) with a maximum emission intensity A of not more than 0.6 times the average value X of top 5% of the maximum emission intensities A at all measurement points in intensity mapping of plane cathodoluminescence, wherein the maximum emission intensity A at each measurement point is determined in the wavelength range of 250 to 365 nm.

α-GaOsemiconductor film

Provided is a base substrate including an orientation layer used for crystal growth of a nitride or oxide of a Group 13 element. A front surface of the orientation layer on a side used for crystal growth is composed of a material having a corundum-type crystal structure having an a-axis length and/or c-axis length larger than that of sapphire. The orientation layer contains a solid solution containing two or more selected from the group consisting of α-AlO, α-CrO, α-FeO, α-TiO, α-VO, and α-RhO.

Ground substrate and method for producing same

Provided is an α-GaObased semiconductor film having a crystal having a corundum-type crystal structure composed of α-GaOor an α-GaOsolid solution as a main phase. This semiconductor film has a size in which the diameter of the largest circle inscribed in the outer circumference thereof is 5.08 cm (2 inches) or more, and at the center point X and each of four outer circumferential points A, B, C, and D of the largest circle on the surface of the semiconductor film, the full width at half maximum of the peak in the vicinity of 216 cmin Raman spectrum of the semiconductor film, as measured by laser Raman spectroscopy, is 6.0 cmor less.

Semiconductor film

Provided is a SiC composite substrate including a biaxially-oriented SiC layer in which SiC is oriented in both a c-axis direction and an a-axis direction, and a SiC polycrystalline layer provided on one surface of the biaxially-oriented SiC layer. A joint interface of the biaxially-oriented SiC layer and the SiC polycrystalline layer has an uneven shape, which has an amount of unevenness of 1 to 200 μm.

Provided is a base substrate including an orientation layer used for crystal growth of a nitride or oxide of a Group 13 element, in which a front surface on a side used for the crystal growth of the orientation layer is composed of a material having a corundum-type crystal structure having an a-axis length and/or c-axis length larger than that of sapphire, the orientation layer contains a material selected from the group consisting of α-CrO, α-FeO, α-TiO, α-VO, and α-RhO, or a solid solution containing two or more selected from the group consisting of α-AlO, α-CrO, α-FeO, α-TiO, α-VO, and α-RhO, and a half width of an X-ray rocking curve of a (104) plane of the corundum-type crystal structure is 500 arcsec. or less.

An α- or β-GaOcrystal is produced by bringing an aqueous solution including a Ga ion into a supercritical state having a temperature of 400° C. or more and a pressure of 22.1 MPa or more.

Method for producing an α- or β-gallium oxide crystal by bring an aqueous solution including Ga ions into a supercritical state

Provided is a α-GaObased semiconductor film which is a semiconductor film in a circular shape having a crystal having a corundum-type crystal structure composed of α-GaOor an α-GaOsolid solution as a main phase. The maximum value θand the minimum value θfor off-angles at the center point X and four outer circumferential points A, B, C, and D of a surface of the semiconductor film satisfy the relationship of θ-θ≤0.30°. The off-angle is defined as an inclination angle θ of a crystal axis oriented in the substantially normal direction of the semiconductor film with respect to the film surface normal of the semiconductor film.

A biaxially oriented SiC composite substrate includes a first biaxially oriented SiC layer that contains a threading screw dislocation and a basal plane dislocation, and a second biaxially oriented SiC layer that is formed continuously from the first biaxially oriented SiC layer and that contains 1×10atoms/cmor more and 1×10atoms/cmor less of a rare earth element. The defect density of a surface of the second biaxially oriented SiC layer is smaller than the defect density of the first biaxially oriented SiC layer.

Biaxially oriented SiC composite substrate and semiconductor device composite substrate

A SiC composite substrate includes a SiC single crystal layer and at least one biaxially oriented SiC layer. The at least one biaxially oriented SiC layer is disposed on the SiC single crystal. In the biaxially oriented SiC layer, the SiC is oriented in both a c-axis direction and an a-axis direction. The biaxially oriented SiC layer has pores and has a density of defect reaching the surface of 1.0×10/cmor less.

SiC composite substrate including biaxially oreinted SiC layer and semiconductor device

An oriented ceramic sintered body production method includes (a) a step of preparing a ceramic compact before firing into an oriented ceramic sintered body; and (b) a step of obtaining an oriented ceramic sintered body by sandwiching the ceramic compact between a pair of releasing sheets, placing the ceramic compact and the releasing sheets in a hot press firing furnace, and hot press firing the ceramic compact while applying a pressure by a pair of punches through the pair of releasing sheets, wherein each of the releasing sheets is a releasing sheet such that, after the releasing sheet is sandwiched between PET films, is then placed and vacuum-packed on a stainless steel sheet, and is isostatically pressed at 200 kg/cm, a surface of the releasing sheet on the side opposite from the stainless steel sheet has a profile curve with a total profile height Pt of 0.8 μm or less.

Oriented ceramic sintered body production method and flat sheet

A gallium oxide single crystal particle according to the present invention is an α-GaOsingle crystal particle and has a diameter and a height that exceed 100 μm.

Gallium oxide single crystal particle and method for producing the same

There is provided a platy zinc oxide sintered compact containing 0.80 wt % or less at least one first dopant element selected from the group consisting of Al, Ga and In, the balance consisting essentially of ZnO and optionally at least one second dopant element selected from the group consisting of Br, Cl, F, Sn, Y, Pr, Ge, B, Sc, Si, Ti, Zr, Hf, Mn, Ta, W, Cu, Ni, Cr, La, Gd, Bi, Ce, Sr and Ba, the second dopant element being optional component, wherein the (002)-plane orientation in the plate surface is 60% or more. The zinc oxide sintered compact of the present invention has excellent properties such as high orientation in addition to transparency and conductivity.

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Nagoya, Japan

Jun Yoshikawa