The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 24, 2026
Filed:
Mar. 10, 2023
Applicant:
Ngk Insulators, Ltd., Nagoya, JP;
Inventors:
Assignee:
NGK INSULATORS, LTD., Nagoya, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10D 62/80 (2025.01); C30B 29/16 (2006.01); C30B 29/68 (2006.01); H01L 21/02 (2006.01); H10D 62/10 (2025.01); C30B 25/14 (2006.01); H10D 62/40 (2025.01);
U.S. Cl.
CPC ...
H10D 62/117 (2025.01); C30B 29/16 (2013.01); C30B 29/68 (2013.01); H01L 21/02565 (2013.01); H10D 62/875 (2025.01); C30B 25/14 (2013.01); H01L 21/0242 (2013.01); H01L 21/0262 (2013.01); H10D 62/40 (2025.01); H10D 62/80 (2025.01);
Abstract
A multilayer structure of the present invention is a multilayer structure including a base substrate and a semiconductor film that is made of α-GaOor an α-GaO-based solid solution and has a corundum crystal structure, the semiconductor film being disposed on the base substrate. The semiconductor film has an average film thickness of greater than or equal to 10 μm. The semiconductor film is convexly or concavely warped. An amount of warpage of the semiconductor film is 20 μm or greater and 64 μm or less.