The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 03, 2024
Filed:
Jun. 11, 2021
Applicant:
Ngk Insulators, Ltd., Nagoya, JP;
Inventors:
Risa Miyakaze, Nagoya, JP;
Kiyoshi Matsushima, Nagoya, JP;
Jun Yoshikawa, Nagoya, JP;
Morimichi Watanabe, Nagoya, JP;
Assignee:
NGK INSULATORS, LTD., Nagoya, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C30B 23/02 (2006.01); C30B 29/36 (2006.01); H01L 21/02 (2006.01); C01B 32/956 (2017.01); H01L 29/16 (2006.01); H01L 29/161 (2006.01); H01L 29/66 (2006.01);
U.S. Cl.
CPC ...
H01L 21/0262 (2013.01); C30B 23/02 (2013.01); C30B 29/36 (2013.01); H01L 21/02378 (2013.01); H01L 21/02433 (2013.01); H01L 21/02529 (2013.01); H01L 21/0259 (2013.01); H01L 21/02609 (2013.01); C01B 32/956 (2017.08); H01L 29/1608 (2013.01); H01L 29/161 (2013.01); H01L 29/66053 (2013.01);
Abstract
A SiC composite substrate includes a SiC single crystal layer and at least one biaxially oriented SiC layer. The at least one biaxially oriented SiC layer is disposed on the SiC single crystal. In the biaxially oriented SiC layer, the SiC is oriented in both a c-axis direction and an a-axis direction. The biaxially oriented SiC layer has pores and has a density of defect reaching the surface of 1.0×10/cmor less.