The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 10, 2024
Filed:
Sep. 07, 2021
Ngk Insulators, Ltd., Nagoya, JP;
Morimichi Watanabe, Nagoya, JP;
Jun Yoshikawa, Nagoya, JP;
NGK INSULATORS, LTD., Nagoya, JP;
Abstract
Provided is a base substrate including an orientation layer used for crystal growth of a nitride or oxide of a Group 13 element, in which a front surface on a side used for the crystal growth of the orientation layer is composed of a material having a corundum-type crystal structure having an a-axis length and/or c-axis length larger than that of sapphire, the orientation layer contains a material selected from the group consisting of α-CrO, α-FeO, α-TiO, α-VO, and α-RhO, or a solid solution containing two or more selected from the group consisting of α-AlO, α-CrO, α-FeO, α-TiO, α-VO, and α-RhO, and a half width of an X-ray rocking curve of a (104) plane of the corundum-type crystal structure is 500 arcsec. or less.