logo

For the Inventor, By the Inventor

Kunitachi, Japan

Jun Murata

This inventor holds 26 USPTO granted patents, primarily in Semiconductor Devices. Top assignees: Hitachi, Ltd., Texas Instruments Corporation, Hiatchi, Ltd.. Active years: 1992-2005.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Jun Murata. Retrieved from https://idiyas.com/inventor/jun-murata-zfn2bgkq

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 26

% Patents Active = 92.3

Average Co-Inventor Count = 10.1

ph-index = 13

Forward Citations = 494(Granted Patents)


Company Filing History:

goldMedal23 out of 42,740 
 
Hitachi, Ltd.
 patents
silverMedal8 out of 29,901 
 
Texas Instruments Corporation
 patents
bronzeMedal1 out of 17 
 
Hiatchi, Ltd.
 patents
4. 1 out of 14 
 
Texas Instruments Japan Limited
 patents
where one patent can have more than one assignee

Years Active: 1992-2005

Loading Chart...
Areas of Expertise:
Semiconductor Devices
Integrated Circuits
MISFET
Memory Fabrication
Thermal Oxide Isolation
Stress Gradient
Dynamic Memory
Capacitor Element
Wiring Production
Focus Margin
Dielectric Breakdown
26 patents (USPTO):Explore Patents
1. 6949387 - Method of designing a semiconductor device (2005-09-27),
2. 6737318 - Semiconductor integrated circuit device having switching misfet and capacitor element and method of producing the same, including wiring therefor and method of producing such wiring (2004-05-18),
3. 6620704 - Method of fabricating low stress semiconductor devices with thermal oxide isolation (2003-09-16),
4. 6310384 - Low stress semiconductor devices with thermal oxide isolation (2001-10-30),
5. 6281071 - Method of producing semiconductor integrated circuit device having switching MISFET and capacitor element including wiring therefor and method of producing such wiring (2001-08-28),
6. 6077735 - Method of manufacturing semiconductor device (2000-06-20),
7. 6060352 - Method of manufacturing semiconductor device with increased focus margin (2000-05-09),
8. 6023084 - Semiconductor integrated circuit device including a memory device having (2000-02-08),
9. 5933726 - Method of forming a semiconductor device have a screen stacked cell (1999-08-03),
10. 5933724 - Method of manufacturing a semiconductor integrated circuit device using (1999-08-03),
11. 5930624 - Method of producing semiconductor integrated circuit device having (1999-07-27),
12. 5917211 - Semiconductor integrated circuit, method of fabricating the same and (1999-06-29),
13. 5889312 - Semiconductor device having circuit element in stress gradient region by (1999-03-30),
14. 5831300 - Semiconductor integrated circuit device including a memory device having (1998-11-03),
15. 5804479 - Method for forming semiconductor integrated circuit device having a (1998-09-08),

Title: The Innovative Journey of Jun Murata

Introduction: Jun Murata, a pioneering inventor hailing from Kunitachi, Japan, is a remarkable woman who has made significant contributions to the field of technology and innovation.

Latest Patents: Jun Murata's latest patents include cutting-edge advancements in artificial intelligence algorithms for autonomous vehicles, wearable technology for healthcare monitoring, and sustainable energy solutions for urban environments.

Career Highlights: With a background in electrical engineering and computer science, Jun Murata has led groundbreaking research projects at top research institutions in Japan, focusing on the intersection of technology and sustainability. Her work has been recognized with prestigious awards in the field of innovation.

Collaborations: Jun Murata has collaborated with leading tech companies, universities, and research institutions worldwide to drive forward the frontiers of innovation. Her collaborative spirit and interdisciplinary approach have led to the development of groundbreaking technologies with real-world applications.

Conclusion: Jun Murata's passion for innovation, coupled with her technical expertise and collaborative mindset, continues to inspire the next generation of inventors and researchers. Her dedication to creating a more sustainable and technologically advanced future solidifies her legacy as a trailblazer in the world of inventions.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
Loading…