The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 18, 2004
Filed:
Dec. 03, 2001
Jun Murata, Kunitachi, JP;
Yoshitaka Tadaki, Ohme, JP;
Isamu Asano, Ohme, JP;
Mitsuaki Horiuchi, Hachioji, JP;
Jun Sugiura, Musashino, JP;
Hiroko Kaneko, Higashimurayama, JP;
Shinji Shimizu, Houya, JP;
Atsushi Hiraiwa, Kodaira, JP;
Hidetsugu Ogishi, Hachioji, JP;
Masakazu Sagawa, Ohme, JP;
Masami Ozawa, Ohme, JP;
Toshihiro Sekiguchi, Ohme, JP;
Hitachi, Ltd., Tokyo, JP;
Abstract
A method of manufacturing a semiconductor integrated circuit device having a switching MISFET and a capacitor element formed over a semiconductor substrate, such as a DRAM, is disclosed. The dielectric film of the capacitor element is formed to be co-extensive with the capacitor electrode layer over it. The upper electrode of the capacitor element is formed to be larger than the lower electrode.