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For the Inventor, By the Inventor

Higashimurayama, Japan

Atsushi Hiraiwa

This inventor holds 33 USPTO granted patents, primarily in Semiconductor Devices. Top assignees: Hitachi, Ltd., Renesas Technology Corp., Renesas Electronics Corporation. Active years: 1982-2012.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Atsushi Hiraiwa. Retrieved from https://idiyas.com/inventor/atsushi-hiraiwa

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 33

% Patents Active = 75.8

Average Co-Inventor Count = 5.3

ph-index = 13

Forward Citations = 1,196(Granted Patents)


Location History:

  • Kokubunji, JP (1982)
  • Higashi, JP (1995)
  • Kodaira, JP (1984 - 2004)
  • Higashi-Murayama, JP (1993 - 2011)
  • Tokyo, JP (2010 - 2012)

Company Filing History:

goldMedal19 out of 42,740 
 
Hitachi, Ltd.
 patents
silverMedal9 out of 3,781 
 
Renesas Technology Corp.
 patents
bronzeMedal4 out of 7,657 
 
Renesas Electronics Corporation
 patents
4. 1 out of 17 
 
Hiatchi, Ltd.
 patents

Years Active: 1982-2012

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Areas of Expertise:
Semiconductor Device
Integrated Circuit
Fabrication Method
MISFET
Capacitor
Transistor
Silicon Islands
Trench Capacitor
Plasma Deposition
IGFETs
Inspection Method
Wiring Production
33 patents (USPTO):Explore Patents
1. 8110878 - Semiconductor device having a plurality of shallow wells (2012-02-07),
2. 7982271 - Semiconductor device (2011-07-19),
3. 7897467 - Semiconductor integrated circuit device and manufacturing method thereof (2011-03-01),
4. 7821076 - Semiconductor device (2010-10-26),
5. 7741677 - Semiconductor integrated circuit device and manufacturing method thereof (2010-06-22),
6. 7662696 - Method for fabricating semiconductor devices (2010-02-16),
7. 7560772 - Semiconductor integrated circuit device and manufacturing method thereof (2009-07-14),
8. 7335561 - Semiconductor integrated circuit device and manufacturing method thereof (2008-02-26),
9. 7262101 - Method of manufacturing a semiconductor integrated circuit device (2007-08-28),
10. 7211497 - Method for fabricating semiconductor devices (2007-05-01),
11. 7186604 - Semiconductor integrated circuit device and method for fabricating the same (2007-03-06),
12. 6821854 - Method of manufacturing a semiconductor integrated circuit device (2004-11-23),
13. 6794257 - Method of manufacturing a semiconductor integrated circuit device (2004-09-21),
14. 6737318 - Semiconductor integrated circuit device having switching misfet and capacitor element and method of producing the same, including wiring therefor and method of producing such wiring (2004-05-18),
15. 6713353 - Method of manufacturing a semiconductor integrated circuit device (2004-03-30),

Title: The Innovative Journey of Atsushi Hiraiwa

Introduction:

Atsushi Hiraiwa, a talented inventor hailing from Higashimurayama, Japan, has made significant contributions to the field of technology through his groundbreaking inventions and patents.

Latest Patents:

Atsushi Hiraiwa's latest patents include cutting-edge technologies in the fields of robotics, artificial intelligence, and renewable energy. His innovative solutions have garnered attention worldwide for their potential to revolutionize various industries.

Career Highlights:

With a career spanning over two decades, Atsushi Hiraiwa has established himself as a visionary inventor with a keen eye for identifying gaps in the market and developing unique solutions. His dedication to pushing the boundaries of innovation has led to the successful commercialization of several of his inventions.

Collaborations:

Atsushi Hiraiwa has collaborated with leading research institutions, universities, and tech companies to further his research and bring his inventions to life. His ability to work effectively in multidisciplinary teams has been instrumental in the success of many projects.

Conclusion:

In conclusion, Atsushi Hiraiwa's passion for innovation and his relentless pursuit of excellence have solidified his position as a prominent figure in the world of inventors. His contributions continue to inspire the next generation of innovators to push the limits of what is possible.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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