The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 14, 2009
Filed:
Dec. 23, 2007
Satoshi Sakai, Yokohama, JP;
Atsushi Hiraiwa, Higashimurayama, JP;
Satoshi Yamamoto, Takarazuka, JP;
Satoshi Sakai, Yokohama, JP;
Atsushi Hiraiwa, Higashimurayama, JP;
Satoshi Yamamoto, Takarazuka, JP;
Renesas Technology Corp., Tokyo, JP;
Abstract
After silicon oxide film () is formed on the surface of a semiconductor substrate (), the silicon oxide film () in a region in which a gate insulation film having a small effective thickness is formed is removed using diluted HF and after that, high dielectric constant insulation film () is formed on the semiconductor substrate (). Consequently, two kinds of gate insulation films, namely, a gate insulation film () comprised of stacked film of high dielectric constant insulation film () and silicon oxide film () and gate insulation film () comprised of the high dielectric constant insulation film () are formed on the semiconductor substrate ().