The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 23, 2004

Filed:

Aug. 05, 2002
Applicant:
Inventors:

Takayuki Kanda, Ome, JP;

Atsushi Hiraiwa, Higashimurayama, JP;

Norio Suzuki, Mito, JP;

Satoshi Sakai, Ome, JP;

Shuji Ikeda, Koganei, JP;

Yasuko Yoshida, Sayama, JP;

Shinichi Horibe, Akiruno, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 2/18234 ;
U.S. Cl.
CPC ...
H01L 2/18234 ;
Abstract

A protection film is formed on a silicon oxide film formed on the surface of a semiconductor substrate, a silicon oxide film is removed from a region where a thin gate-insulating film is to be formed by using, as a mask, a photoresist pattern that covers a region where a thick gate-insulating film is to be formed, and, then, the photoresist pattern is removed followed by washing. Then, the semiconductor substrate is heat-oxidized or a film is deposited thereon to form gate-insulating films having different thicknesses.


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