The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 09, 2000
Filed:
Jan. 28, 1998
Applicant:
Inventors:
Toshihiro Sekiguchi, Hidaka, JP;
Hideo Aoki, Hamura, JP;
Yoshitaka Tadaki, Hanno, JP;
Keizo Kawakita, Ome, JP;
Jun Murata, Kunitachi, JP;
Katsuo Yuhara, Ibaraki-ken, JP;
Michio Nishimura, Tokorozawa, JP;
Kazuhiko Saitoh, Ibaraki-ken, JP;
Minoru Ohtsuka, Fussa, JP;
Masayuki Yasuda, Kunitachi, JP;
Toshiyuki Kaeriyama, Ibaraki-ken, JP;
Songsu Cho, Ibaraki-ken, JP;
Assignee:
Hitachi, Ltd., Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
438253 ; 438637 ;
Abstract
A method for fabricating DRAMs each having a COB structure, and the semiconductor device formed by this method, are provided. In one embodiment, the word line and/or bit line is covered with an insulating film having a comparatively small etching rate. Contact holes are formed while being defined by those insulating films in self-alignment.