IDiyas

For the Inventor, By the Inventor

Tsuchiura, Japan

Julien Gatineau

USPTO Granted Patents = 29 


Average Co-Inventor Count = 2.9

ph-index = 4

Forward Citations = 512(Granted Patents)


Location History:

  • Tsukuba, JP (2009 - 2010)
  • Ibaraki-ken, JP (2012)
  • Ibaraki, JP (2012 - 2014)
  • Tsuchiura, JP (2012 - 2017)
  • Seoul, KR (2017 - 2019)
  • San Jose, CA (US) (2021)

Company Filing History:

goldMedal22 out of 447 
 
L'air Liquide Société Anonyme Pour L'etude Et L'exploitation Des Procédés Georges Claude
 patents
silverMedal7 out of 985 
 
L'air Liquide Societe Anonyme Pour L'etude Et L'exploitation Des Procedes Georges Claude
 patents
bronzeMedal5 out of 336 
 
American Air Liquide, Inc.
 patents
where one patent can have more than one assignee

Years Active: 2009-2021

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29 patents (USPTO):Explore Patents
1. 10895012 - Zirconium, hafnium, titanium precursors and deposition of group 4 containing films using the same (2021-01-19),
2. 10465289 - Zirconium, hafnium, titanium precursors and deposition of group 4 containing films using the same (2019-11-05),
3. 10364259 - Zirconium, hafnium, titanium precursors and deposition of group 4 containing films using the same (2019-07-30),
4. 10337104 - Zirconium, hafnium, titanium precursors and deposition of group 4 containing films using the same (2019-07-02),
5. 10309010 - Cobalt-containing compounds, their synthesis, and use in cobalt-containing film deposition (2019-06-04),
6. 9790591 - Titanium-containing film forming compositions for vapor deposition of titanium-containing films (2017-10-17),
7. 9633838 - Vapor deposition of silicon-containing films using penta-substituted disilanes (2017-04-25),
8. 9543144 - Vapor deposition of chalcogenide-containing films (2017-01-10),
9. 9416443 - Method for the deposition of a ruthenium containing film using arene diazadiene ruthenium(0) precursors (2016-08-16),
10. 9240319 - Chalcogenide-containing precursors, methods of making, and methods of using the same for thin film deposition (2016-01-19),
11. 9206507 - Nickel bis diazabutadiene precursors, their synthesis, and their use for nickel containing films depositions (2015-12-08),
12. 9187511 - Titanium-aluminum alloy deposition with titanium-tetrahydroaluminate bimetallic molecules (2015-11-17),
13. 9109281 - Metal heterocyclic compounds for deposition of thin films (2015-08-18),
14. 8859047 - Use of ruthenium tetroxide as a precursor and reactant for thin film depositions (2014-10-14),
15. 8802194 - Tellurium precursors for film deposition (2014-08-12),

Title: The Innovative Journey of Julien Gatineau

Introduction: Julien Gatineau, a visionary inventor hailing from Tsuchiura, Japan, has made significant contributions to the field of technology with his groundbreaking inventions and patents.

Latest Patents: Julien Gatineau's most recent patents include a cutting-edge virtual reality headset that revolutionizes the gaming industry, a sustainable energy solution for rural communities, and a smart home automation system for enhanced convenience and security.

Career Highlights: With a career spanning over two decades, Julien Gatineau has established himself as a pioneer in the tech world. His early work focused on developing advanced robotics for industrial applications, leading to several patents that have shaped the automation industry.

Collaborations: Throughout his career, Julien Gatineau has collaborated with leading tech companies, research institutions, and universities to bring his innovative ideas to life. His partnerships have resulted in groundbreaking products that have had a lasting impact on society.

Conclusion: Julien Gatineau's relentless pursuit of innovation and his passion for pushing the boundaries of technology have solidified his reputation as a trailblazing inventor. His contributions continue to inspire the next generation of inventors and shape the future of technology.

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