The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 14, 2014
Filed:
Dec. 22, 2010
Applicants:
Julien Gatineau, Tsuchiura, JP;
Christian Dussarrat, Tokyo, JP;
Inventors:
Julien Gatineau, Tsuchiura, JP;
Christian Dussarrat, Tokyo, JP;
Assignees:
L'Air Liquide, Societe Anonyme pour l'Etude et l'Exploitation des Procedes Georges Claude, Paris, FR;
American Air Liquide, Inc., Fremont, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C23C 16/40 (2006.01); C23C 16/18 (2006.01); C23C 16/455 (2006.01); H01L 21/02 (2006.01);
U.S. Cl.
CPC ...
C23C 16/40 (2013.01); C23C 16/18 (2013.01); C23C 16/45531 (2013.01); H01L 21/02304 (2013.01); H01L 21/02197 (2013.01);
Abstract
Disclosed are atomic layer deposition methods using ruthenium-containing precursors to form ruthenium-containing films for use in the manufacture of semiconductor, photovoltaic, LCD-TFT, or flat panel type devices.
Gatineau, Julien. (2014). Use of ruthenium tetroxide as a precursor and reactant for thin film depositions (U.S. Patent No. 8859047). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/8859047
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile