L'air Liquide, Soci&#xe9;t&#xe9; Anonyme Pour L'etude Et L'exploitation Des Proc&#xe9;d&#xe9;s Georges Claude

American Air Liquide, Inc.

Julien Gatineau

Christian Dussarrat

Jean-Marc Girard

Satoko Gatineau

Kazutaka Yanagita

Hana Ishii

Changhee Ko

Wontae Noh

Shingo Okubo

Daehyeon Kim

Clément Lansalot-Matras

Ikuo Suzuki

Julien Lieffrig

Eri Tsukada

Andreas Zauner

Naoto Noda

Ivan Oshchepkov

Benjamin J Jurcik

Nathanaelle Schneider

Mao Minoura

Group 4 transition metal-containing film forming compositions are disclosed comprising Group 4 transition metal precursors having the formula: wherein M is Ti, Zr, or Hf; each A is independently N, Si, B or P; each E is independently C, Si, B or P; m and n is independently 0, 1 or 2; m+n&#x3e;1; each R is independently a H or a C-Chydrocarbon group; each L is independently a &#x2212;1 anionic ligand selected from the group consisting of NR', OR&#x2032;, Cp, amidinate, &#x3b2;-diketonate, or keto-iminate, wherein R&#x2032; is a H or a C-Chydrocarbon group; and L&#x2032; is NR&#x2033; or O, wherein R&#x2033; is a H or a C-Chydrocarbon group. Also disclosed are methods of synthesizing and using the disclosed precursors to deposit Group 4 transition metal-containing films on one or more substrates via vapor deposition processes.

Zirconium, hafnium, titanium precursors and deposition of group 4 containing films using the same

Group 4 transition metal-containing film forming compositions comprising Group 4 transition metal precursors having the formula: wherein M is Ti, Zr, or Hf; each E is independently C, Si, B or P; m and n is independently 0, 1 or 2; m+n&#x3e;1; o and p is independently 0, 1 or 2; o+p&#x3e;1; each R is independently hydrogen or or a C-Chydrocarbon group; each L is independently a &#x2212;1 anionic ligand selected from the group consisting of NR', OR&#x2032;, Cp, amidinate, &#x3b2;-diketonate or keto-iminate, wherein R&#x2032; is a H or a C-Chydrocarbon group; and each L&#x2032; is independently NR&#x2033; or O, wherein R&#x2033; is a H or a C-Chydrocarbon group. Also disclosed are methods of synthesizing and using the disclosed precursors to deposit Group 4 transition metal-containing films on one or more substrates via vapor deposition processes.

Group 4 transition metal-containing film forming compositions are disclosed. The Group 4 transition metal-containing film forming compositions comprise Group 4 transition metal precursors having the formula L-M-CR-[(ER)&#x2014;NR]&#x2014;, wherein M is Ti, Zr, or Hf bonded in an &#x3b7;bonding mode to the Cp group; each E is independently C, Si, B or P; each R is independently a hydrogen or a C-Chydrocarbon group; and each L is independently a &#x2212;1 anionic ligand selected from the group consisting of NR', OR&#x2032;, Cp, amidinate, &#x3b2;-diketonate, or keto-iminate, wherein R&#x2032; is a H or a C-Chydrocarbon group and adjacent R&#x2032;s may be joined to form a hydrocarbyl ring; provided that at least one R on the Cp is Cto C. Also disclosed are methods of synthesizing and using the disclosed precursors to deposit Group 4 transition metal-containing films on one or more substrates via vapor deposition processes.

Cobalt-containing compounds, their synthesis, and their use for the deposition of cobalt containing films are disclosed. The disclosed cobalt-containing compounds have one of the following formulae: wherein each of R, R, R, Rand Ris independently selected from the group consisting of hydrogen and linear, cyclic, or branched hydrocarbon groups; provided that (a) R&#x2260;Rand/or Rwhen Rand Rand Rare a hydrocarbon group; (b) Rand Rare a hydrocarbon group when Ris H; or (c) Ris a C2-C4 hydrocarbon group when Rand Rare H.

Cobalt-containing compounds, their synthesis, and use in cobalt-containing film deposition

Titanium-containing film forming compositions are disclosed as well as methods of synthesizing the same and methods of forming Titanium-containing films on substrates via vapor deposition processes using the Titanium-containing film forming compositions. The Titanium-containing film forming compositions comprise a precursor having the formula Ti(RCp)(L), wherein each R is independently H, an alkyl group, or R'Si, with each R&#x2032; independently being H or an alkyl group; L is selected from the group consisting of formamidinates (N-fmd) or amidinates (NR&#x2033;-amd).

Titanium-containing film forming compositions for vapor deposition of titanium-containing films

Disclosed are methods of depositing silicon-containing films on one or more substrates via vapor deposition processes using penta-substituted disilanes, such as pentahalodisilane or pentakis(dimethylamino)disilane.

Vapor deposition of silicon-containing films using penta-substituted disilanes

Chalcogenide-containing film forming compositions, methods of synthesizing the same, and methods of forming Chalcogenide-containing films on one or more substrates via vapor deposition processes using the Chalcogenide-containing film forming compositions are disclosed.

Vapor deposition of chalcogenide-containing films

The invention concerns the use of ruthenium containing precursors having the formula (1) wherein R1, R2 . . . R10 are independently selected from H, C1-C4 linear, branched, or cyclic alkyl group, C1-C4 linear, branched, or cyclic alkylsilyl group (mono, bis, or trisalkyl), C1-C4 linear, branched, or cyclic alkylamino group, or a C1-C4 linear, branched, or cyclic fluoroalkyl group (totally fluorinated or not); for the deposition of a Ru containing film on a substrate. 

Method for the deposition of a ruthenium containing film using arene diazadiene ruthenium(0) precursors

Disclosed are chalcogenide-containing precursors for use in the manufacture of semiconductor, photovoltaic, LCD-TFT1 or flat panel type devices. Also disclosed are methods of synthesizing the chalcogenide-containing precursors and vapor deposition methods, preferably thermal ALD, using the chalcogenide-containing precursors to form chalcogenide-containing films.

Chalcogenide-containing precursors, methods of making, and methods of using the same for thin film deposition

Disclosed are homoleptic diazabutadiene nickel precursors used for the vapor deposition of nickel-containing films. The precursors have the general formula Ni(R-DAD), wherein R-DAD stands for substituted 1,4-diazabuta-1,3-diene ligands. The sole presence of the Ni&#x2014;N bonds was also considered to avoid too high intrusion of other elements, such as carbon, into the nickel-containing films. The flexibility of the Ni&#x2014;N bond in terms of film deposition also allows using the molecules for nickel, nickel-nitride, nickel-carbonitride, nickel oxide or any other type of nickel-containing films. The nickel-containing film depositions can be carried out by thermal and/or plasma-enhanced CVD, ALD, and pulse CVD or any other type of depositions methods.

Nickel bis diazabutadiene precursors, their synthesis, and their use for nickel containing films depositions

Disclosed are titanium-tetrahydroaluminates precursors, their method of manufacture, and their use in the deposition of titanium-aluminum-containing films. The disclosed precursors have the formulae Ti(AlH)&#x2014;X, Ti(AlH)L and Ti(AlH)L. The disclosed precursors may be used to deposit pure titanium-aluminum (TiAl), titanium-aluminum nitride (TiAlN), titanium-aluminum carbide (TiAlC), titanium-aluminum carbonitride (TiAlCN), titanium-aluminum silicide ((TiAl)Si), titanium-aluminum siliconitride ((TiAl)SiN), titanium-aluminum boron ((TiAl)B), titanium-aluminum boron nitride ((TiAl)BN), or titanium-aluminum oxide (TiAlO). or any other titanium-aluminum-containing films. The titanium-aluminum-containing films may be deposited using the disclosed precursors in thermal and/or plasma-enhanced CVD, ALD, pulse CVD or any other type of depositions methods.

Titanium-aluminum alloy deposition with titanium-tetrahydroaluminate bimetallic molecules

Methods and compositions for depositing a metal containing film on a substrate are disclosed. A reactor and at least one substrate disposed in the reactor are provided. A metal containing precursor is provided and introduced into the reactor, which is maintained at a temperature of at least 100&#xb0; C. A metal is deposited on to the substrate through a deposition process to form a thin film on the substrate.

Metal heterocyclic compounds for deposition of thin films

Disclosed are atomic layer deposition methods using ruthenium-containing precursors to form ruthenium-containing films for use in the manufacture of semiconductor, photovoltaic, LCD-TFT, or flat panel type devices.

Use of ruthenium tetroxide as a precursor and reactant for thin film depositions

Methods and compositions for depositing a tellurium-containing film on a substrate are disclosed. A reactor and at least one substrate disposed in the reactor are provided. A tellurium-containing precursor is provided and introduced into the reactor, which is maintained at a temperature ranging from approximately 20&#xb0; C. to approximately 100&#xb0; C. Tellurium is deposited on to the substrate through a deposition process to form a thin film on the substrate.

Growing community of inventors

Tsuchiura, Japan

Julien Gatineau