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For the Inventor, By the Inventor

Lake Katrine, NY, United States of America

Joseph F Maniscalco

USPTO Granted Patents = 30 


Average Co-Inventor Count = 3.9

ph-index = 4

Forward Citations = 75(Granted Patents)


Location History:

  • Lake Katrine, NY (US) (1999 - 2023)
  • Greenville, SC (US) (2024)

Company Filing History:

goldMedal30 out of 164,108 
 
International Business Machines Corporation
 patents

Years Active: 1999-2025

where 'Filed Patents' based on already Granted Patents

30 patents (USPTO):
1. 12349597 - Conical magnetic random access memory pillar structures (2025-07-01),
2. 12342726 - Etching of magnetic tunnel junction (MTJ) stack for magnetoresistive random-access memory (MRAM) (2025-06-24),
3. 12317752 - MRAM structure with multilayer encapsulation (2025-05-27),
4. 12167700 - Replacement bottom electrode structure for MRAM devices (2024-12-10),
5. 12108685 - Multi-diameter magnetic random-access memory pillar structure (2024-10-01),
6. 12040230 - Encapsulated top via interconnects (2024-07-16),
7. 11758819 - Magneto-resistive random access memory with laterally-recessed free layer (2023-09-12),
8. 11682471 - Dual damascene crossbar array for disabling a defective resistive switching device in the array (2023-06-20),
9. 11664271 - Dual damascene with short liner (2023-05-30),
10. 11430690 - Interconnects having air gap spacers (2022-08-30),
11. 11380641 - Pillar bump with noble metal seed layer for advanced heterogeneous integration (2022-07-05),
12. 11282768 - Fully-aligned top-via structures with top-via trim (2022-03-22),
13. 11183455 - Interconnects with enlarged contact area (2021-11-23),
14. 11177171 - Encapsulated top via interconnects (2021-11-16),
15. 11158538 - Interconnect structures with cobalt-infused ruthenium liner and a cobalt cap (2021-10-26),

Title: The Innovative Journey of Joseph F Maniscalco: Pioneering Patents in Memory Devices

Introduction: Joseph F Maniscalco is a renowned inventor based in Lake Katrine, NY, with an impressive portfolio of 24 patents to his name. His groundbreaking work in the field of memory devices has revolutionized the way we store and access data.

Latest Patents: Among his latest patents is the "Magneto-resistive random access memory with laterally-recessed free layer," a cutting-edge memory device featuring a laterally-recessed magnetic free layer that enhances performance and efficiency. Additionally, Maniscalco's "Dual damascene crossbar array for disabling a defective resistive switching device" patent showcases his innovative method of fabricating a dual damascene crossbar array, optimizing memory device functionality.

Career Highlights: Joseph F Maniscalco is a valued member of the International Business Machines Corporation (IBM), where his inventive spirit and technical expertise have contributed significantly to the company's success. His dedication to pushing the boundaries of memory device technology has earned him a reputation as a trailblazer in the industry.

Collaborations: Throughout his career, Joseph F Maniscalco has collaborated with esteemed colleagues such as Koichi Motoyama and Oscar van der Straten. These collaborations have led to groundbreaking innovations and further solidified Maniscalco's position as a visionary inventor in the field of memory devices.

Conclusion: Joseph F Maniscalco's exceptional talent and relentless pursuit of innovation have cemented his legacy as a pioneering inventor in the realm of memory devices. His patents continue to shape the future of data storage and access, inspiring future generations of inventors to push the boundaries of what is possible in the world of technology.

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