The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 12, 2023

Filed:

Dec. 15, 2020
Applicant:

International Business Machines Corporation, Armonk, NY (US);

Inventors:

Oscar van der Straten, Guilderland Center, NY (US);

Koichi Motoyama, Clifton Park, NY (US);

Kenneth Chun Kuen Cheng, Shatin, HK;

Joseph F. Maniscalco, Lake Katrine, NY (US);

Chih-Chao Yang, Glenmont, NY (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10N 50/10 (2023.01); G11C 11/16 (2006.01); H10B 61/00 (2023.01); H10N 50/01 (2023.01); H10N 50/80 (2023.01); H10N 50/85 (2023.01);
U.S. Cl.
CPC ...
H10N 50/10 (2023.02); G11C 11/161 (2013.01); H10B 61/00 (2023.02); H10N 50/01 (2023.02); H10N 50/80 (2023.02); H10N 50/85 (2023.02);
Abstract

A memory device, and a method of forming the same, includes a bottom electrode above an electrically conductive structure, the electrically conductive structure is embedded in an interconnect dielectric material. A magnetic tunnel junction stack located above the bottom electrode is formed by a magnetic reference layer above the bottom electrode, a tunnel barrier layer above the magnetic reference layer, and a laterally-recessed magnetic free layer above the tunnel barrier layer. Sidewall spacers surround the laterally-recessed magnetic free layer for confining an active region formed by the laterally-recessed magnetic free and the tunnel barrier layer.


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