The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 05, 2022

Filed:

Nov. 04, 2020
Applicant:

International Business Machines Corporation, Armonk, NY (US);

Inventors:

Joseph F. Maniscalco, Lake Katrine, NY (US);

Kenneth Chun Kuen Cheng, Shatin, HK;

Koichi Motoyama, Clifton Park, NY (US);

Oscar van der Straten, Guilderland Center, NY (US);

Alexander Reznicek, Troy, NY (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/00 (2006.01);
U.S. Cl.
CPC ...
H01L 24/11 (2013.01); H01L 24/13 (2013.01); H01L 2224/114 (2013.01); H01L 2224/1147 (2013.01); H01L 2224/11614 (2013.01); H01L 2924/01029 (2013.01); H01L 2924/01044 (2013.01); H01L 2924/01045 (2013.01); H01L 2924/01046 (2013.01); H01L 2924/01077 (2013.01); H01L 2924/01078 (2013.01);
Abstract

A pillar bump structure, and a method for forming the same includes forming, on a semiconductor substrate, a blanket liner followed by a seed layer including a noble metal. A first photoresist layer is formed directly above the seed layer followed by the formation of a first plurality of openings within the photoresist layer. A first conductive material is deposited within each of the first plurality of openings to form first pillar bumps. The first photoresist layer is removed from the semiconductor structure followed by removal of portions of the seed layer extending outward from the first pillar bumps, a portion of the seed layer remains underneath the first pillar bumps.


Find Patent Forward Citations

Maniscalco, Joseph. (2022). Pillar bump with noble metal seed layer for advanced heterogeneous integration (U.S. Patent No. 11380641). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/11380641

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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