IDiyas

For the Inventor, By the Inventor

Suwon-si, South Korea

Jong Hwi Park

USPTO Granted Patents = 30 

 

Average Co-Inventor Count = 6.4

ph-index = 1

Forward Citations = 6(Granted Patents)


Location History:

  • Gyeonggi-do, KR (2018 - 2024)
  • Suwon-si, KR (2019 - 2024)
  • Cheonan-si, KR (2024)

Company Filing History:

goldMedal21 out of 26 
 
Senic Inc.
 patents
silverMedal6 out of 143 
 
Skc Co., Ltd.
 patents
bronzeMedal2 out of 18,523 
 
Hyundai Motor Company
 patents
4. 1 out of 1 
 
Emro Co., Ltd.
 patent
5. 1 out of 95 
 
Hyundai Steel Company
 patents
where one patent can have more than one assignee

Years Active: 2018-2025

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30 patents (USPTO):Explore Patents
1. 12359344 - Silicon carbide powder and method for manufacturing silicon carbide ingot using the same (2025-07-15),
2. 12325933 - Silicon carbide powder, method for manufacturing silicon carbide ingot using the same, and silicon carbide wafer (2025-06-10),
3. 12320033 - Silicon carbide wafer and method of preparing the same (2025-06-03),
4. 12270122 - Silicon carbide wafer and semiconductor device (2025-04-08),
5. 12136653 - Silicon carbide wafer and semiconductor device applied the same (2024-11-05),
6. 12037704 - Silicon carbide wafer and method of manufacturing same (2024-07-16),
7. 12026764 - Method and apparatus for providing information using trained model based on machine learning (2024-07-02),
8. 11969917 - Manufacturing method of silicon carbide wafer, silicon carbide wafer and system for manufacturing wafer (2024-04-30),
9. 11939698 - Wafer manufacturing method, epitaxial wafer manufacturing method, and wafer and epitaxial wafer manufactured thereby (2024-03-26),
10. 11862685 - Wafer and method of manufacturing wafer (2024-01-02),
11. 11856678 - Method of measuring a graphite article, apparatus for a measurement, and ingot growing system (2023-12-26),
12. 11795572 - Method of manufacturing a silicon carbide ingot comprising moving a heater surrounding a reactor to induce silicon carbide raw materials to sublimate and growing the silicon carbide ingot on a seed crystal (2023-10-24),
13. 11708644 - Method for preparing SiC ingot, method for preparing SiC wafer and the SiC wafer prepared therefrom (2023-07-25),
14. 11646209 - Method of cleaning wafer and wafer with reduced impurities (2023-05-09),
15. 11591711 - Method and system for producing silicon carbide ingot (2023-02-28),

Title: Jong Hwi Park - Innovative Inventor from Suwon-si, KR

Introduction: Jong Hwi Park is a talented inventor hailing from Suwon-si, South Korea, known for his groundbreaking contributions to the field of technology and innovation.

Latest Patents: Jong Hwi Park holds several patents in the areas of artificial intelligence, robotics, and renewable energy technologies, showcasing his diverse range of expertise and innovative thinking.

Career Highlights: With a career spanning over two decades, Jong Hwi Park has worked with leading tech companies in South Korea, spearheading research and development projects that have led to significant advancements in various industries.

Collaborations: Throughout his career, Jong Hwi Park has collaborated with top researchers, engineers, and scientists both locally and internationally, fostering a culture of innovation and knowledge sharing.

Conclusion: Jong Hwi Park's passion for innovation, coupled with his relentless drive to push the boundaries of technology, has solidified his reputation as a visionary inventor in Suwon-si, South Korea, and beyond.

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