The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 03, 2025
Filed:
Sep. 17, 2021
Senic Inc., Cheonan-si, KR;
Jong Hwi Park, Suwon-si, KR;
Kap-Ryeol Ku, Suwon-si, KR;
Jung Woo Choi, Suwon-si, KR;
Byung Kyu Jang, Suwon-si, KR;
Myung-Ok Kyun, Suwon-si, KR;
Jung-Gyu Kim, Suwon-si, KR;
Jung Doo Seo, Suwon-si, KR;
SENIC INC., Cheonan-si, KR;
Abstract
The method of preparing a silicon carbide ingot includes: disposing a raw material and a silicon carbide seed crystal to be separated in a reactor having an internal space; adjusting a temperature, a pressure, and an atmosphere of the internal space for sublimating the raw material and growing the silicon carbide ingot on the silicon carbide seed crystal; and cooling the reactor and retrieving the silicon carbide ingot, wherein the adjusting proceeds in a first inert gas atmosphere having a flow quantity of 100 sccm to 300 sccm, the cooling proceeds in a second inert gas atmosphere having a flow quantity of 1 sccm to 250 sccm, and the reactor has a thermal conductivity of 120 W/mK or less.