IDiyas

For the Inventor, By the Inventor

Cheonan-si, South Korea

Senic Inc.


USPTO Granted Patents = 26


Trademarks = 3

Forward Citations = 2

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15 inventors (with patents filed for the assignee):

goldMedal Jung Woo Choi (26 out of 30 patents)

silverMedal Kap-Ryeol Ku (23 out of 25 patents)

bronzeMedal Jung-Gyu Kim (23 out of 29 patents)

4.  Jong Hwi Park (21 out of 30 patents)

5.  Byung Kyu Jang (18 out of 21 patents)

6.  Sang Ki Ko (17 out of 22 patents)

7.  Eun Su Yang (10 out of 10 patents)

8.  Jongmin Shim (8 out of 25 patents)

9.  Jung Doo Seo (8 out of 12 patents)

10.  Myung-Ok Kyun (6 out of 16 patents)

11.  Myung Ok Kyun (4 out of 5 patents)

12.  Yeon Sik Lee (3 out of 3 patents)

13.  Jung Gyu Kim (3 out of 3 patents)

14.  Kap Ryeol Ku (3 out of 3 patents)

15.  Il Hwan Yoo (1 out of 1 patent)


26 patents:

1. 12359344 - Silicon carbide powder and method for manufacturing silicon carbide ingot using the same (2025-07-15),
2. 12325933 - Silicon carbide powder, method for manufacturing silicon carbide ingot using the same, and silicon carbide wafer (2025-06-10),
3. 12320033 - Silicon carbide wafer and method of preparing the same (2025-06-03),
4. 12270122 - Silicon carbide wafer and semiconductor device (2025-04-08),
5. 12136653 - Silicon carbide wafer and semiconductor device applied the same (2024-11-05),
6. 12037704 - Silicon carbide wafer and method of manufacturing same (2024-07-16),
7. 11969917 - Manufacturing method of silicon carbide wafer, silicon carbide wafer and system for manufacturing wafer (2024-04-30),
8. 11939698 - Wafer manufacturing method, epitaxial wafer manufacturing method, and wafer and epitaxial wafer manufactured thereby (2024-03-26),
9. 11862685 - Wafer and method of manufacturing wafer (2024-01-02),
10. 11859305 - Apparatus for growing a SiC single crystal ingot comprising a filter unit having a porous body surrounding an opening unit that is located under a seed crystal (2024-01-02),
11. 11856678 - Method of measuring a graphite article, apparatus for a measurement, and ingot growing system (2023-12-26),
12. 11846038 - Method of growing semi-insulating silicon carbide single crystal using dopant coated with a carbon-based material (2023-12-19),
13. 11795572 - Method of manufacturing a silicon carbide ingot comprising moving a heater surrounding a reactor to induce silicon carbide raw materials to sublimate and growing the silicon carbide ingot on a seed crystal (2023-10-24),
14. 11708644 - Method for preparing SiC ingot, method for preparing SiC wafer and the SiC wafer prepared therefrom (2023-07-25),
15. 11646209 - Method of cleaning wafer and wafer with reduced impurities (2023-05-09),
Senic Inc. is a technology company specializing in innovative smart home solutions. With a focus on user-centered design, Senic develops and manufactures high-quality connected devices that simplify everyday life. Their products include smart switches, controllers, and software applications that enable seamless control over lighting, music, and other connected devices in the home. Senic Inc. is committed to creating intuitive and sustainable solutions that enhance the comfort, convenience, and security of modern living environments.
This text is generated by artificial intelligence and may not be accurate.

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USPTO Data Jan 1 1976 - Dec 9 2025

26 Patents

#7 in Cheonan-si

#495 in South Korea

#24,051 in the World

...
Cheonan-si, South Korea

Senic Inc.

Forward Citations = 2

15 inventors:

goldMedal Jung Woo Choi (26 out of 30 patents)

silverMedal Kap-Ryeol Ku (23 out of 25 patents)

bronzeMedal Jung-Gyu Kim (23 out of 29 patents)

4.  Jong Hwi Park (21 out of 30 patents)

5.  Byung Kyu Jang (18 out of 21 patents)

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