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For the Inventor, By the Inventor

Cheonan, South Korea

Senic Inc.


USPTO Granted Patents = 26


Trademarks = 2

Forward Citations = 2

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15 inventors (with patents filed for the assignee):

goldMedal Jung Woo Choi (26 out of 30 patents)

silverMedal Kap-Ryeol Ku (23 out of 25 patents)

bronzeMedal Jung-Gyu Kim (23 out of 29 patents)

4.  Jong Hwi Park (21 out of 30 patents)

5.  Byung Kyu Jang (18 out of 21 patents)

6.  Sang Ki Ko (17 out of 22 patents)

7.  Eun Su Yang (10 out of 10 patents)

8.  Jongmin Shim (8 out of 25 patents)

9.  Jung Doo Seo (8 out of 12 patents)

10.  Myung-Ok Kyun (6 out of 17 patents)

11.  Myung Ok Kyun (4 out of 6 patents)

12.  Yeon Sik Lee (3 out of 3 patents)

13.  Jung Gyu Kim (3 out of 3 patents)

14.  Kap Ryeol Ku (3 out of 3 patents)

15.  Il Hwan Yoo (1 out of 1 patent)


Core Competencies:
Silicon Carbide
Wafer Manufacturing
Ingot Growth
Epitaxial Wafer
Single Crystal
Dopant Coated
Porous Body
Graphite Measurement
Seed Crystal
Semiconductor Device
Impurity Reduction
Laminate Preparation

26 patents:

1. 12359344 - Silicon carbide powder and method for manufacturing silicon carbide ingot using the same (2025-07-15),
2. 12325933 - Silicon carbide powder, method for manufacturing silicon carbide ingot using the same, and silicon carbide wafer (2025-06-10),
3. 12320033 - Silicon carbide wafer and method of preparing the same (2025-06-03),
4. 12270122 - Silicon carbide wafer and semiconductor device (2025-04-08),
5. 12136653 - Silicon carbide wafer and semiconductor device applied the same (2024-11-05),
6. 12037704 - Silicon carbide wafer and method of manufacturing same (2024-07-16),
7. 11969917 - Manufacturing method of silicon carbide wafer, silicon carbide wafer and system for manufacturing wafer (2024-04-30),
8. 11939698 - Wafer manufacturing method, epitaxial wafer manufacturing method, and wafer and epitaxial wafer manufactured thereby (2024-03-26),
9. 11862685 - Wafer and method of manufacturing wafer (2024-01-02),
10. 11859305 - Apparatus for growing a SiC single crystal ingot comprising a filter unit having a porous body surrounding an opening unit that is located under a seed crystal (2024-01-02),
11. 11856678 - Method of measuring a graphite article, apparatus for a measurement, and ingot growing system (2023-12-26),
12. 11846038 - Method of growing semi-insulating silicon carbide single crystal using dopant coated with a carbon-based material (2023-12-19),
13. 11795572 - Method of manufacturing a silicon carbide ingot comprising moving a heater surrounding a reactor to induce silicon carbide raw materials to sublimate and growing the silicon carbide ingot on a seed crystal (2023-10-24),
14. 11708644 - Method for preparing SiC ingot, method for preparing SiC wafer and the SiC wafer prepared therefrom (2023-07-25),
15. 11646209 - Method of cleaning wafer and wafer with reduced impurities (2023-05-09),
Senic Inc. is a technology company based in Cheonan, South Korea, specializing in innovative solutions for smart home and IoT applications. The organization focuses on developing user-friendly interfaces and advanced control systems that enhance the connectivity and functionality of modern living spaces. With a commitment to integrating cutting-edge technology, Senic aims to improve everyday experiences through seamless interaction between users and their environments, positioning itself as a leader in the smart technology sector.
Profile summary based on public USPTO records.

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USPTO Data Jan 1 1976 - Sep 29 2026

26 Patents

#7 in Cheonan

#508 in South Korea

#24,758 in the World

Cheonan, KR
Cheonan, South Korea

Senic Inc.

Forward Citations = 2

15 inventors:

goldMedal Jung Woo Choi (26 out of 30 patents)

silverMedal Kap-Ryeol Ku (23 out of 25 patents)

bronzeMedal Jung-Gyu Kim (23 out of 29 patents)

4.  Jong Hwi Park (21 out of 30 patents)

5.  Byung Kyu Jang (18 out of 21 patents)

Please report any incorrect information to [email protected]
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