The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 26, 2024

Filed:

Nov. 03, 2020
Applicant:

Senic Inc., Cheonan-si, KR;

Inventors:

Jong Hwi Park, Suwon-si, KR;

Jung-Gyu Kim, Suwon-si, KR;

Eun Su Yang, Suwon-si, KR;

Byung Kyu Jang, Suwon-si, KR;

Jung Woo Choi, Suwon-si, KR;

Yeon Sik Lee, Suwon-si, KR;

Sang Ki Ko, Suwon-si, KR;

Kap-Ryeol Ku, Suwon-si, KR;

Assignee:

SENIC INC., Cheonan-si, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C30B 29/36 (2006.01); C30B 23/02 (2006.01); C30B 33/10 (2006.01); H01L 21/306 (2006.01); H01L 29/16 (2006.01);
U.S. Cl.
CPC ...
C30B 29/36 (2013.01); C30B 23/02 (2013.01); C30B 33/10 (2013.01); H01L 21/30625 (2013.01); H01L 29/1608 (2013.01);
Abstract

A wafer manufacturing method, an epitaxial wafer manufacturing method, and a wafer and epitaxial wafer manufactured thereby, are provided. The wafer manufacturing method enables the manufacture of a wafer with a low density of micropipe defects and minimum numbers of particles and scratches. The epitaxial wafer manufacturing method enables the manufacture of an epitaxial wafer that has low densities of defects such as downfall, triangular, and carrot defects, exhibits excellent device characteristics, and improves the yield of devices.


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