The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 08, 2025
Filed:
Jun. 09, 2022
Senic Inc., Cheonan-si, KR;
Jung Woo Choi, Cheonan-si, KR;
Myung Ok Kyun, Cheonan-si, KR;
Jong Hwi Park, Cheonan-si, KR;
Jung Doo Seo, Cheonan-si, KR;
Jung-Gyu Kim, Cheonan-si, KR;
Kap-Ryeol Ku, Cheonan-si, KR;
SENIC Inc., Cheonan-si, KR;
Abstract
A silicon carbide wafer has one surface and the other surface opposite to the one surface. An average Rmax roughness of the one surface is 2.0 nm or less, and an average Ra roughness of the one surface is 0.1 nm or less. An edge region is a region in which a distance from an edge of the silicon carbide wafer toward a center is 5% to 75% of a radius of the silicon carbide wafer, and a central region is a region having a radius of 25% of the radius of the silicon carbide wafer at the center of the silicon carbide wafer. A difference between an average Rmax roughness of the edge region of the one surface and an average Rmax roughness of the central region of the one surface is 0.01 nm to 0.5 nm.