The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 25, 2023

Filed:

Jun. 30, 2020
Applicant:

Senic Inc., Cheonan-si, KR;

Inventors:

Jong Hwi Park, Suwon-si, KR;

Myung-Ok Kyun, Suwon-si, KR;

Jongmin Shim, Hwaseong-si, KR;

Byung Kyu Jang, Suwon-si, KR;

Jung Woo Choi, Suwon-si, KR;

Sang Ki Ko, Suwon-si, KR;

Kap-Ryeol Ku, Suwon-si, KR;

Jung-Gyu Kim, Suwon-si, KR;

Assignee:

SENIC INC., Cheonan-si, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C30B 29/36 (2006.01); B24B 7/22 (2006.01); B28D 5/00 (2006.01); C30B 23/02 (2006.01); C01B 32/956 (2017.01); B28D 5/02 (2006.01); B28D 5/04 (2006.01); H01L 29/16 (2006.01);
U.S. Cl.
CPC ...
C30B 29/36 (2013.01); B24B 7/228 (2013.01); B28D 5/00 (2013.01); C01B 32/956 (2017.08); C30B 23/02 (2013.01); B28D 5/022 (2013.01); B28D 5/045 (2013.01); H01L 29/1608 (2013.01);
Abstract

A method for preparing a SiC ingot includes: preparing a reactor by disposing a raw material in a crucible body and disposing a SiC seed in a crucible cover, and then wrapping the crucible body with a heat insulating material having a density of 0.14 to 0.28 g/cc; and growing the SiC ingot from the SiC seed by placing the reactor in a reaction chamber and adjusting an inside of the reactor to a crystal growth atmosphere such that the raw material is vapor-transported and deposited to the SiC seed.


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