The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 16, 2024

Filed:

Nov. 04, 2022
Applicant:

Senic Inc., Chungcheongnam-do, KR;

Inventors:

Myung Ok Kyun, Gyeonggi-do, KR;

Kap Ryeol Ku, Gyeonggi-do, KR;

Jung Gyu Kim, Gyeonggi-do, KR;

Jung Woo Choi, Gyeonggi-do, KR;

Jung Doo Seo, Gyeonggi-do, KR;

Jong Hwi Park, Gyeonggi-do, KR;

Assignee:

SENIC INC., Chungcheongnam-do, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
B32B 3/00 (2006.01); C30B 23/02 (2006.01); C30B 29/36 (2006.01);
U.S. Cl.
CPC ...
C30B 29/36 (2013.01); C30B 23/02 (2013.01);
Abstract

Disclosed are a silicon carbide wafer and a method of manufacturing the same. The silicon carbide wafer includes an upper surface and a lower surface, the upper surface includes a first target region, the first target region being within 85% of a radius of the upper surface based on a center of the upper surface, a first peak omega angle measured at intervals of 15 mm in a first direction in the first target region is within −1° to +1° based on a peak omega angle measured at the center of the upper surface, and the first direction is a [1-100] direction and a direction passing through the center of the upper surface.


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