The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 28, 2023

Filed:

Nov. 03, 2020
Applicant:

Senic Inc., Cheonan-si, KR;

Inventors:

Jong Hwi Park, Suwon-si, KR;

Eun Su Yang, Suwon-si, KR;

Byung Kyu Jang, Suwon-si, KR;

Jung Woo Choi, Suwon-si, KR;

Sang Ki Ko, Suwon-si, KR;

Kap-Ryeol Ku, Suwon-si, KR;

Jung-Gyu Kim, Suwon-si, KR;

Assignee:

SENIC INC., Cheonan-si, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C30B 1/12 (2006.01); C30B 29/36 (2006.01); C30B 33/00 (2006.01);
U.S. Cl.
CPC ...
C30B 1/12 (2013.01); C30B 29/36 (2013.01); C30B 33/005 (2013.01);
Abstract

A silicon carbide ingot producing method is provided. The method produces a silicon carbide ingot in which an internal space of a reactor is depressurized and heated to create a predetermined difference in temperature between upper and lower portions of the internal space. The method produces a silicon carbide ingot in which a plane of a seed crystal corresponding to the rear surface of the silicon carbide ingot is lost minimally. Additionally, the method produces a silicon carbide ingot with few defects and good crystal quality.


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