Springfield, VA, United States of America

John Bradley Boos

This inventor holds 19 USPTO granted patents and 1 published patent application, primarily in Compound Semiconductors. Top assignees: USA as Represented by Secretary of the Navy, Northrop Grumman Systems Corporation. Active years: 1987-2019.

IDiyas Innovation Intelligence. (2026). Inventor Profile: John Bradley Boos. Retrieved from https://idiyas.com/inventor/john-bradley-boos

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank

USPTO Granted Patents = 19 (Patent Applications = 1)

% Patents Active = 52.6

Average Co-Inventor Count = 2.9

ph-index = 6

Forward Citations = 140(Granted Patents)

Company Filing History:

18 out of 16,286

USA as Represented by Secretary of the Navy

patents

2 out of 3,456

Northrop Grumman Systems Corporation

patents

where one patent can have more than one assignee

Years Active: 1987-2019

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Areas of Expertise:

Graphene Edge Field Emitter

Quantum Wells

Field Effect Transistors

Heterojunction Bipolar Transistors

High Electron Mobility Transistors

Antimonide-Based Semiconductors

RF Mixer

Electronic Devices

Monolithic Amplifier Arrays

P-N Junctions

TiW Diffusion Barrier

InP Junction FETs

19 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 10192979 - Vacuum transistor structure using graphene edge field emitter and screen electrode (2019-01-29),

2. 9054169 - Strained InGaAs quantum wells for complementary transistors (2015-06-09),

3. 9006708 - Low-resistivity p-type GaSb quantum wells (2015-04-14),

4. 8927354 - Antimonide-based compound semiconductor with titanium tungsten stack (2015-01-06),

5. 8884265 - Strained InGaAs quantum wells for complementary transistors (2014-11-11),

6. 8652959 - n- and p-channel field effect transistors with single quantum well for complementary circuits (2014-02-18),

7. 8461664 - N- and p-channel field-effect transistors with single quantum well for complementary circuits (2013-06-11),

8. 8421121 - Antimonide-based compound semiconductor with titanium tungsten stack (2013-04-16),

9. 8076700 - P-N junction for use as an RF mixer from GHZ to THZ frequencies (2011-12-13),

10. 7635879 - InAlAsSb/InGaSb and InAlPSb/InGaSb heterojunction bipolar transistors (2009-12-22),

11. 7388235 - High electron mobility transistors with Sb-based channels (2008-06-17),

12. 6448648 - Metalization of electronic semiconductor devices (2002-09-10),

13. 6316124 - Modified InAs hall elements (2001-11-13),

14. 5798540 - Electronic devices with InAlAsSb/AlSb barrier (1998-08-25),

15. 5196358 - Method of manufacturing InP junction FETS and junction HEMTS using dual (1993-03-23),

Sure, I can help you with that article! Here is the structured information about inventor John Bradley Boos based on the given data:

Title: The Innovative Journey of John Bradley Boos

Introduction:

John Bradley Boos, a prolific inventor hailing from Springfield, VA, has left a significant mark in the realm of technology with his groundbreaking creations.

Latest Patents:

1. "Vacuum Transistor Structure Using Graphene Edge Field Emitter and Screen Electrode": This invention features a unique device incorporating graphene edge field emitter technology, offering innovative solutions for efficient electronics.

2. "Strained InGaAs Quantum Wells for Complementary Transistors": Introducing a novel InGaAs quantum well heterostructure designed for complementary transistors, showcasing Boos' advanced knowledge in semiconductor technologies.

Career Highlights:

With an impressive portfolio of 19 patents to his name, Boos has demonstrated his exceptional expertise in the field of electrical engineering and semiconductor devices.

Collaborations:

During his career, John Boos collaborated with notable professionals such as Brian R. Bennett and Nicolas A. Papanicolaou. His innovative spirit and collaborative efforts have propelled the evolution of technology in various sectors.

Conclusion:

John Bradley Boos stands as a pioneering figure in the world of innovations, with his inventive spirit and technological prowess shaping the landscape of modern electronics. His contributions continue to inspire and drive advancements in the field, leaving a lasting legacy in the industry.

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Profile summary based on public USPTO records.

Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]

1 patent pending: