The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 14, 2015
Filed:
May. 16, 2013
Brian R. Bennett, Arlington, VA (US);
Theresa F. Chick, Alexandria, VA (US);
Mario G. Ancona, Alexandria, VA (US);
John Bradley Boos, Springfield, VA (US);
Brian R. Bennett, Arlington, VA (US);
Theresa F. Chick, Alexandria, VA (US);
Mario G. Ancona, Alexandria, VA (US);
John Bradley Boos, Springfield, VA (US);
The United States of America, as represented by the Secretary of the Navy, Washington, DC (US);
Abstract
A semiconductor device including a heterostructure having at least one low-resistivity p-type GaSb quantum well is provided. The heterostructure includes a layer of InAlAs on an InP substrate, where the InAlAs is lattice matched to InP, followed by an AlAsSbbuffer layer on the InAlAs layer, an AlAsSbspacer layer on the AlAsSbbuffer layer, a GaSb quantum well layer on the AlAsSbspacer layer, an AlAsSbbarrier layer on the GaSb quantum well layer, an InAlSb etch-stop layer on the AlAsSbbarrier layer, and an InAs cap. The semiconductor device is suitable for use in low-power electronic devices such as field-effect transistors.