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For the Inventor, By the Inventor

Arlington, VA, United States of America

Brian R Bennett

USPTO Granted Patents = 14 

Average Co-Inventor Count = 3.9

ph-index = 6

Forward Citations = 178(Granted Patents)


Location History:

  • Alexandria, VA (US) (1998)
  • Arlington, VA (US) (2000 - 2015)

Company Filing History:

goldMedal14 out of 16,070 
 
USA As Represented by Secretary of the Navy
 patents

Years Active: 1998-2015

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14 patents (USPTO):Explore Patents
1. 9054169 - Strained InGaAs quantum wells for complementary transistors (2015-06-09),
2. 9006708 - Low-resistivity p-type GaSb quantum wells (2015-04-14),
3. 8884265 - Strained InGaAs quantum wells for complementary transistors (2014-11-11),
4. 8652959 - n- and p-channel field effect transistors with single quantum well for complementary circuits (2014-02-18),
5. 8461664 - N- and p-channel field-effect transistors with single quantum well for complementary circuits (2013-06-11),
6. 7635879 - InAlAsSb/InGaSb and InAlPSb/InGaSb heterojunction bipolar transistors (2009-12-22),
7. 7388235 - High electron mobility transistors with Sb-based channels (2008-06-17),
8. 7064542 - Hybrid Hall vector magnetometer (2006-06-20),
9. 6917198 - Hybrid hall vector magnetometer (2005-07-12),
10. 6800913 - Hybrid Hall vector magnetometer (2004-10-05),
11. 6316124 - Modified InAs hall elements (2001-11-13),
12. 6297987 - Magnetoresistive spin-injection diode (2001-10-02),
13. 6133593 - Channel design to reduce impact ionization in heterostructure (2000-10-17),
14. 5798540 - Electronic devices with InAlAsSb/AlSb barrier (1998-08-25),

Title: The Innovations of Brian R Bennett

Introduction

Brian R Bennett is an accomplished inventor based in Arlington, VA, known for his significant contributions to semiconductor technology. With a portfolio of 14 patents, Bennett has been instrumental in advancing the field of complementary transistors and low-power electronic devices.

Latest Patents

Among his latest innovations are two notable patents. The first, titled "Strained InGaAs quantum wells for complementary transistors," focuses on an InGaAs n-channel quantum well heterostructure designed for use in complementary transistors. This invention includes a buffer layer with a lattice constant that accommodates the strain produced by mismatched lattice constants between the n-channel and p-channel materials.

The second patent, "Low-resistivity p-type GaSb quantum wells," describes a semiconductor device with a heterostructure that incorporates at least one low-resistivity p-type GaSb quantum well. This invention features a layered composition that is suitable for low-power electronic devices such as field-effect transistors, showcasing Bennett's commitment to enhancing semiconductor performance.

Career Highlights

Bennett's career includes a notable tenure working for the United States of America, as represented by the Secretary of the Navy. His work primarily focuses on developing advanced semiconductor technologies that push the boundaries of electronic device capabilities.

Collaborations

Throughout his career, Bennett has collaborated with esteemed colleagues, including John Bradley Boos and Mark B Johnson. These partnerships have facilitated the exchange of innovative ideas and technical expertise, contributing to the success of their projects within the realm of semiconductor research and development.

Conclusion

Brian R Bennett stands out as a prominent inventor whose work continues to shape the landscape of semiconductor technology. His latest patents reflect a deep understanding of complex materials and structures, while his collaborations highlight the importance of teamwork in driving innovation forward. With a total of 14 patents, Bennett's contributions are likely to have a lasting impact on the industry.

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