The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 22, 2009
Filed:
Sep. 20, 2005
John Bradley Boos, Springfield, VA (US);
Brian R. Bennett, Arlington, VA (US);
Paul Campbell, Alexandria, VA (US);
Richard Magno, Waldorf, MD (US);
John Bradley Boos, Springfield, VA (US);
Brian R. Bennett, Arlington, VA (US);
Paul Campbell, Alexandria, VA (US);
Richard Magno, Waldorf, MD (US);
The United States of America as represented by the Secretary of the Navy, Washington, DC (US);
Abstract
This invention pertains to heterojunction bipolar transistors containing a semiconductor substrate, a buffer layer of an antimony-based material deposited on the substrate, a sub-collector layer of an antimony-based material deposited on the buffer layer, a collector layer of an antimony-based material deposited on the sub-collector layer, a base layer of an antimony-based material deposited on the collector layer, an emitter layer of an antimony-based material deposited on the base layer, and a cap layer of an antimony-based material deposited on the emitter layer.