The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 11, 2014
Filed:
Jan. 16, 2014
Brian R. Bennett, Arlington, VA (US);
John Bradley Boos, Springfield, VA (US);
Theresa F. Chick, Alexandria, VA (US);
James G. Champlain, Alexandria, VA (US);
Brian R. Bennett, Arlington, VA (US);
John Bradley Boos, Springfield, VA (US);
Theresa F. Chick, Alexandria, VA (US);
James G. Champlain, Alexandria, VA (US);
The United States of America, as represented by the Secretary of the Navy, Washington, DC (US);
Abstract
An InGaAs n-channel quantum well heterostructure for use in a complementary transistor having a Sb-based p-channel. The heterostructure includes a buffer layer having a lattice constant intermediate that of the n- and p-channel materials and which is configured to accommodate the strain produced by a lattice-constant mismatch between the n-channel and p-channel materials.