Company Filing History:
Years Active: 2011-2019
Title: The Innovative Contributions of James G Champlain
Introduction
James G Champlain is a notable inventor based in Alexandria, VA, with a remarkable portfolio of six patents. His work primarily focuses on advanced semiconductor technologies, contributing significantly to the field of electronics.
Latest Patents
Among his latest patents is the "Vacuum transistor structure using graphene edge field emitter and screen electrode." This innovative device features a substrate with a dielectric surface, a gate electrode, a drain electrode, and a source electrode that includes a conductive contact and a two-dimensional material edge. The design ensures that the source is adjacent to the gate, while the drain electrode maintains a specific distance from the edge, allowing for an unobstructed electron path. Another significant patent is for "Strained InGaAs quantum wells for complementary transistors." This invention involves an InGaAs n-channel quantum well heterostructure designed for use in complementary transistors, accommodating strain produced by lattice-constant mismatches.
Career Highlights
James G Champlain works for the United States as represented by the Secretary of the Navy. His role involves developing cutting-edge technologies that enhance the capabilities of electronic devices and systems.
Collaborations
Throughout his career, Champlain has collaborated with esteemed colleagues, including John Bradley Boos and Brian R Bennett. Their combined expertise has contributed to the advancement of innovative technologies in the field.
Conclusion
James G Champlain's contributions to semiconductor technology and his innovative patents reflect his dedication to advancing electronic systems. His work continues to influence the industry and pave the way for future innovations.