The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 13, 2011
Filed:
Jun. 02, 2009
Richard Magno, Waldorf, MD (US);
Mario Ancona, Alexandria, VA (US);
John Bradley Boos, Springfield, VA (US);
James G Champlain, Alexandria, VA (US);
Harvey S Newman, Washington, DC (US);
Richard Magno, Waldorf, MD (US);
Mario Ancona, Alexandria, VA (US);
John Bradley Boos, Springfield, VA (US);
James G Champlain, Alexandria, VA (US);
Harvey S Newman, Washington, DC (US);
The United States of America as represented by the Secretary of the Navy, Washington, DC (US);
Abstract
This disclosure describes a semiconductor device that can be used as a mixer at RF frequencies extending from a few tens of GHz into the THz frequency range. The device is composed of narrow bandgap semiconductors grown by solid source molecular beam epitaxy. The device can comprise a GaSb substrate, a AlSb layer on the GaSb substrate, a InAlAsSblayer, on the AlSb layer and wherein the InAlAsSbcomprises varying levels of Te doping, a InGaSb layer on the InAlAsSblayer, wherein the InGaSb layer is Be doped, wherein the first section of the InAlAsSblayer has is Te doped, wherein the second section of the InAlAsSblayer has a grade in Te concentration, and wherein the third section of the InAlAsSblayer is Te doped.