USA As Represented by Secretary of the Navy

James G Champlain

John Bradley Boos

Brian R Bennett

Mario Ancona

Nicolas A Papanicolaou

Theresa F Chick

Jonathan L Shaw

Bradford B Pate

Doewon Park

Richard Magno

Kevin Jensen

Harvey S Newman

Joan E Yater

Byoung-don Kong

A device having: a substrate having a dielectric surface; a gate electrode; a drain electrode; a source electrode having a conductive contact and a two-dimensional material edge; and a dielectric material between the source and the gate. The source is adjacent to the gate. The drain electrode is not laterally between the edge and the gate electrode, and the distance from the drain electrode to the edge is greater than the distance from the gate electrode to the edge. The edge does not contact any other component of the device. The gate, drain, and source are not in electrical contact with each other. There is a line of sight or electron path from the edge to the drain electrode.

Vacuum transistor structure using graphene edge field emitter and screen electrode

An InGaAs n-channel quantum well heterostructure for use in a complementary transistor having a Sb-based p-channel. The heterostructure includes a buffer layer having a lattice constant intermediate that of the n- and p-channel materials and which is configured to accommodate the strain produced by a lattice-constant mismatch between the n-channel and p-channel materials.

Strained InGaAs quantum wells for complementary transistors

A complementary metal oxide semiconductor (CMOS) device in which a single InGaSb quantum well serves as both an n-channel and a p-channel in the same device and a method for making the same. The InGaSb layer is part of a heterostructure that includes a Te-delta doped AlGaSb layer above the InGaSb layer on a portion of the structure. The portion of the structure without the Te-delta doped AlGaSb barrier layer can be fabricated into a p-FET by the use of appropriate source, gate, and drain terminals, and the portion of the structure retaining the Te-delta doped AlGaSb layer can be fabricated into an n-FET so that the structure forms a CMOS device, wherein the single InGaSb quantum well serves as the transport channel for both the n-FET portion and the p-FET portion of the heterostructure.

n- and p-channel field effect transistors with single quantum well for complementary circuits

N- and p-channel field-effect transistors with single quantum well for complementary circuits

This disclosure describes a semiconductor device that can be used as a mixer at RF frequencies extending from a few tens of GHz into the THz frequency range. The device is composed of narrow bandgap semiconductors grown by solid source molecular beam epitaxy. The device can comprise a GaSb substrate, a AlSb layer on the GaSb substrate, a InAlAsSblayer, on the AlSb layer and wherein the InAlAsSbcomprises varying levels of Te doping, a InGaSb layer on the InAlAsSblayer, wherein the InGaSb layer is Be doped, wherein the first section of the InAlAsSblayer has is Te doped, wherein the second section of the InAlAsSblayer has a grade in Te concentration, and wherein the third section of the InAlAsSblayer is Te doped.

P-N junction for use as an RF mixer from GHZ to THZ frequencies

Growing community of inventors

Alexandria, VA, United States of America

James G Champlain