The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 06, 2015

Filed:

Mar. 11, 2013
Applicants:

Northrop Grumman Systems Corporation, Falls Church, VA (US);

The United States of America As Represented BY the Secretary of the Navy, Arlington, VA (US);

Inventors:

Yeong-Chang Chou, Irvine, CA (US);

Jay Crawford, Long Beach, CA (US);

Jane Lee, Torrance, CA (US);

Jeffrey Ming-Jer Yang, Cerritos, CA (US);

John Bradley Boos, Springfield, VA (US);

Nicolas Alexandrou Papanicolaou, Potomac, MD (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/338 (2006.01); H01L 29/778 (2006.01); H01L 29/66 (2006.01);
U.S. Cl.
CPC ...
H01L 29/66431 (2013.01); H01L 29/7783 (2013.01);
Abstract

An apparatus in one example comprises an antimonide-based compound semiconductor (ABCS) stack, an upper barrier layer formed on the ABCS stack, and a gate stack formed on the upper barrier layer. The upper barrier layer comprises indium, aluminum, and arsenic. The gate stack comprises a base layer of titanium and tungsten formed on the upper barrier layer.


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