The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 16, 2013

Filed:

Apr. 18, 2007
Applicants:

Yeong-chang Chou, Irvine, CA (US);

Jay Crawford, Long Beach, CA (US);

Jane Lee, Torrance, CA (US);

Jeffrey Ming-jer Yang, Cerritos, CA (US);

John Bradley Boos, Springfield, VA (US);

Nicolas Alexandrou Papanicolaou, Potomac, MD (US);

Inventors:

Yeong-Chang Chou, Irvine, CA (US);

Jay Crawford, Long Beach, CA (US);

Jane Lee, Torrance, CA (US);

Jeffrey Ming-Jer Yang, Cerritos, CA (US);

John Bradley Boos, Springfield, VA (US);

Nicolas Alexandrou Papanicolaou, Potomac, MD (US);

Assignee:

Northrop Grumman Systems Corporation, Falls Church, VA (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/778 (2006.01);
U.S. Cl.
CPC ...
Abstract

An apparatus in one example comprises an antimonide-based compound semiconductor (ABCS) stack, an upper barrier layer formed on the ABCS stack, and a gate stack formed on the upper barrier layer. The upper barrier layer comprises indium, aluminum, and arsenic. The gate stack comprises a base layer of titanium and tungsten formed on the upper barrier layer.


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