Company Filing History:

25 out of 12,867

Advanced Micro Devices Corporation

Years Active: 2002-2014

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31 patents (USPTO):Sort by Forward Citations

Abstract keywords

1. 8841140 - Technique for forming a passivation layer without a terminal metal (2014-09-23),

2. 8828888 - Protection of reactive metal surfaces of semiconductor devices during shipping by providing an additional protection layer (2014-09-09),

3. 8759232 - Compressive stress transfer in an interlayer dielectric of a semiconductor device by providing a bi-layer of superior adhesion and internal stress (2014-06-24),

4. 8546274 - Interlayer dielectric material in a semiconductor device comprising stressed layers with an intermediate buffer material (2013-10-01),

5. 8450172 - Non-insulating stressed material layers in a contact level of semiconductor devices (2013-05-28),

6. 8338284 - Stress engineering in a contact level of semiconductor devices by stressed conductive layers and an isolation spacer (2012-12-25),

7. 8211795 - Method of forming a dielectric cap layer for a copper metallization by using a hydrogen based thermal-chemical treatment (2012-07-03),

8. 8153524 - Providing superior electromigration performance and reducing deterioration of sensitive low-k dielectrics in metallization systems of semiconductor devices (2012-04-10),

9. 8053354 - Reduced wafer warpage in semiconductors by stress engineering in the metallization system (2011-11-08),

10. 8034726 - Interlayer dielectric material in a semiconductor device comprising a doublet structure of stressed materials (2011-10-11),

11. 7994072 - Stress transfer by sequentially providing a highly stressed etch stop material and an interlayer dielectric in a contact layer stack of a semiconductor device (2011-08-09),

12. 7994059 - Enhanced stress transfer in an interlayer dielectric by using an additional stress layer above a dual stress liner in a semiconductor device (2011-08-09),

13. 7938973 - Arc layer having a reduced flaking tendency and a method of manufacturing the same (2011-05-10),

14. 7906383 - Stress transfer in an interlayer dielectric by providing a stressed dielectric layer above a stress-neutral dielectric material in a semiconductor device (2011-03-15),

15. 7875561 - Interlayer dielectric material in a semiconductor device comprising stressed layers with an intermediate buffer material (2011-01-25),

Title: Joerg Hohage: Innovator in Semiconductor Technologies

Introduction

Joerg Hohage, based in Dresden, Germany, is a prominent inventor recognized for his contributions to semiconductor technology. With an impressive portfolio of 31 patents, he has made significant advancements that enhance manufacturing processes and improve the reliability of semiconductor devices.

Latest Patents

Among Hohage's most recent innovations are two notable patents. The first patent focuses on a technique for forming a passivation layer without a terminal metal. By assessing a surface characteristic of a passivation layer stack, this innovation enables the simulation of the manufacturing situation after the deposition and patterning of a terminal metal layer stack. This advancement allows for the use of established bump manufacturing techniques while simplifying the overall process by eliminating the need for terminal metal layer deposition and patterning.

The second patent addresses the protection of reactive metal surfaces of semiconductor devices during shipping. Hohage's solution includes a dedicated protection layer that passivates copper-based contact regions in complex metallization systems, enabling efficient patterning before transportation. This approach allows for the re-exposure of the protected contact surface at the remote manufacturing site via a non-masked wet chemical etch process, thereby enhancing production efficiency.

Career Highlights

Joerg Hohage has held significant roles in major companies such as Advanced Micro Devices (AMD) and Globalfoundries Inc. His work in these renowned organizations has influenced semiconductor manufacturing techniques and contributed to the overall enhancement of device performance.

Collaborations

Throughout his career, Hohage has collaborated with esteemed colleagues, including Hartmut Ruelke and Ralf Richter. These partnerships have fostered innovative developments and facilitated the exchange of ideas that propel the semiconductor industry forward.

Conclusion

Joerg Hohage stands as a pivotal figure in the field of semiconductor technology, with a robust collection of patents that highlight his inventive prowess. His latest contributions demonstrate a commitment to advancing manufacturing processes, ultimately benefiting the industry and enhancing the capabilities of semiconductor devices.

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1 patent (EPO):

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1 patent pending (EPO):

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