The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 28, 2013
Filed:
Jun. 25, 2010
Applicants:
Ralf Richter, Dresden, DE;
Hartmut Ruelke, Dresden, DE;
Joerg Hohage, Dresden, DE;
Inventors:
Assignee:
GLOBALFOUNDRIES Inc., Grand Cayman, KY;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/8238 (2006.01); H01L 21/4763 (2006.01); H01L 21/44 (2006.01);
U.S. Cl.
CPC ...
Abstract
In sophisticated semiconductor devices, non-insulating materials with extremely high internal stress level may be used in the contact level in order to enhance performance of circuit elements, such as field effect transistors, wherein the non-insulating material may be appropriately 'encapsulated' by dielectric material. Consequently, a desired high strain level may be obtained on the basis of a reduced layer thickness, while still providing the insulating characteristics required in the contact level.